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IPB180N03S4LH0ATMA1

P1-P3P4-P6P7-P9
IPB180N03S4L-H0
OptiMOS™-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25°C, V
GS
=10V
1)
180 A
T
C
=100 °C,
V
GS
=10 V
2)
180
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
720
Avalanche energy, single pulse
2)
E
AS
I
D
=90 A
980 mJ
Avalanche current, single pulse
I
AS
-
180 A
Gate source voltage
V
GS
- ±16 V
Power dissipation
P
tot
T
C
=25 °C
250 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
V
DS
30 V
R
DS(on)
0.95
mΩ
I
D
180 A
Product Summary
PG-TO263-7-3
Type Package Marking
IPB180N03S4L-H0 PG-TO263-7-3 4N03LH0
Rev. 1.0 page 1 2009-12-03
IPB180N03S4L-H0
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
2)
Thermal resistance, junction - case
R
thJC
- - - 0.6 K/W
SMD version, device on PCB
R
thJA
minimal footprint - - 62
6 cm
2
cooling area
3)
--40
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
= 1 mA
30 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=200 µA
1 1.5 2.2
Zero gate voltage drain current
I
DSS
V
DS
=30 V, V
GS
=0 V,
T
j
=25 °C
- 0.01 1 µA
V
DS
=18 V, V
GS
=0 V,
T
j
=85 °C
2)
-560
Gate-source leakage current
I
GSS
V
GS
=16 V, V
DS
=0 V
- 1 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=4.5 V, I
D
=90 A
- 0.95 1.30
mΩ
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V, I
D
=100 A
- 0.73 0.95 mΩ
Values
Rev. 1.0 page 2 2009-12-03
IPB180N03S4L-H0
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
2)
Input capacitance
C
iss
- 17500 23000 pF
Output capacitance
C
oss
- 3720 4800
Reverse transfer capacitance
C
rss
- 175 350
Turn-on delay time
t
d(on)
-9-ns
Rise time
t
r
-7-
Turn-off delay time
t
d(off)
-60-
Fall time
t
f
-25-
Gate Char
g
e Characteristics
2)
Gate to source charge
Q
gs
-5572nC
Gate to drain charge
Q
gd
-2856
Gate charge total
Q
g
- 230 300
Gate plateau voltage
V
plateau
- 3.1 - V
Reverse Diode
Diode continous forward current
2)
I
S
- - 180 A
Diode pulse current
2)
I
S,pulse
- - 720
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=100 A,
T
j
=25 °C
- 0.9 1.3 V
Reverse recovery time
2)
t
rr
- 250 - ns
Reverse recovery charge
2)
Q
rr
- 280 - nC
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1)
Current is limited by bondwire; with an R
thJC
= 0.6 K/W the chip is able to carry 400A at 25°C.
V
R
=20 V, I
F
=100A,
di
F
/dt =100 A/µs
T
C
=25 °C
Values
V
GS
=0 V, V
DS
=25 V,
f =1 MHz
V
DD
=15 V, V
GS
=10 V,
I
D
=100 A, R
G
=1.6 Ω
V
DD
=24 V, I
D
=180 A,
V
GS
=0 to 10 V
Rev. 1.0 page 3 2009-12-03
P1-P3P4-P6P7-P9

IPB180N03S4LH0ATMA1

Mfr. #:
Buy IPB180N03S4LH0ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2
Lifecycle:
New from this manufacturer.
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