Characteristics STTH16003
2/7
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
Δ T
j
(diode1)
= P
(diode1)
x R
th(j-c)
(per diode)
+ P
(diode2)
x R
th(c)
1. to evaluate the maximum conduction losses use the following equation:
P = 0.75 x I
F(AV)
+ 0.0025 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values, per diode, T
amb
= 25 °C unless otherwise stated)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 300 V
I
F(RMS)
RMS forward current 180 A
I
F(AV)
Average forward current Tc = 85°C δ = 0.5
Per diode
Per device
60
160
A
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 800 A
I
RSM
Non repetitive peak reverse current t
p
= 100 µs square 5 A
T
stg
Storage temperature range -55 to + 150 °C
T
j
Maximum operating junction temperature 150 °C
Table 3. Thermal parameters
Symbol Parameter Maximum Unit
R
th(j-c)
Junction to case
Per diode 0.7
°C/WTotal 0.4
R
th(c)
Coupling 0.1
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, δ < 2 %
Reverse leakage current
T
j
= 25 °C
V
R
= 300 V
200 µA
T
j
= 125 °C 0.2 2
mA
V
F
(2)
2. Pulse test: t
p
= 380 µs, δ < 2 %
Forward voltage drop
T
j
= 25 °C
I
F
= 80 A
1.2
V
T
j
= 125 °C 0.8 0.95
