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BUK7626-100B,118

P1-P3P4-P6P7-P9P10-P12P13-P14
BUK7626-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 2 February 2011 6 of 13
NXP Semiconductors
BUK7626-100B
N-channel TrenchMOS standard level FET
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
03nm40
0
50
100
150
0246810
V
DS
(V)
I
D
(A)
5
6.5
7
7.5
5.5
6
8
10
20
4.5
Label is V
GS
(V)
03nm39
15
22
29
36
43
50
5101520
V
GS
(V)
R
DSon
(mΩ)
03aa35
V
GS
(V)
0642
10
−4
10
−5
10
−2
10
−3
10
−1
I
D
(A)
10
−6
min typ max
03nm37
0
7
14
21
28
35
0 25 50 75 100
I
D
(A)
g
fs
(S)
BUK7626-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 2 February 2011 7 of 13
NXP Semiconductors
BUK7626-100B
N-channel TrenchMOS standard level FET
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 10. Gate-source threshold voltage as a function of
junction temperature
Fig 11. Drain-source on-state resistance as a function
of drain current; typical values
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
03nm38
0
25
50
75
100
02468
V
GS
(V)
I
D
(A)
T
j
= 175
°
C T
j
= 25
°
C
T
j
(°C)
−60 180120060
03aa32
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
03nm41
10
20
30
40
50
60
0 25 50 75 100
I
D
(A)
R
DSon
(mΩ)
Label is V
GS
(V)
20
10
9
8
7
6.5
6
5.5
03ng41
0
0.7
1.4
2.1
2.8
-60 0 60 120 180
T
j
(
°
C)
a
BUK7626-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 2 February 2011 8 of 13
NXP Semiconductors
BUK7626-100B
N-channel TrenchMOS standard level FET
Fig 13. Gate-source voltage as a function of gate
charge; typical values
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 15. Source current as a function of source-drain voltage; typical values
03nm36
0
2
4
6
8
10
0 10203040
Q
G
(nC)
V
GS
(V)
V
DD
= 80 V
V
DD
= 14 V
03nm42
0
1000
2000
3000
10
−2
10
−1
1 10 10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
03nm35
0
25
50
75
100
0.0 0.5 1.0 1.5
V
SD
(V)
I
S
(A)
T
j
= 175 °C
T
j
= 25 °C
P1-P3P4-P6P7-P9P10-P12P13-P14

BUK7626-100B,118

Mfr. #:
Buy BUK7626-100B,118
Manufacturer:
Nexperia
Description:
MOSFET HIGH PERF TRENCHMOS
Lifecycle:
New from this manufacturer.
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