LL41
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 09-May-12
1
Document Number: 85671
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
MECHANICAL DATA
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
• For general purpose applications
• This diode features low turn-on voltage and high
breakdown voltage
• This device is protected by a PN junction
guardring against excessive voltage, such as
electrostatic discharges
• This diode is also available in the DO-35 case with type
designation BAT41
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Note
(1)
Pulse test, t
p
= 300 μs
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION REMARKS
LL41 LL41-GS18 or LL41-GS08 Single diode Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V
RRM
100 V
Forward continuous current
(1)
I
F
100 mA
Repetitive peak forward current
(1)
t
p
< 1 s, < 0.5 I
FRM
350 mA
Surge forward current
(1)
t
p
= 10 ms I
FSM
750 mA
Power dissipation
(1)
T
amb
= 65 °C P
tot
200 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air R
thJA
300
(1)
K/W
Junction temperature T
j
125 °C
Ambient operating temperature range T
amb
- 65 to + 125 °C
Storage temperature range T
stg
- 65 to + 150 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reserve breakdown voltage
(1)
I
R
= 100 μA V
(BR)
100 110 V
Leakage current
(1)
V
R
= 50 V, T
j
= 25 °C I
R
100 nA
V
R
= 50 V, T
j
= 100 °C I
R
20 μA
Forward voltage
(1)
I
F
= 1 mA V
F
400 450 mV
I
F
= 200 mA V
F
1000 mV
Diode capacitance V
R
= 1 V, f = 1 MHz C
D
2pF
