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STBV42

P1-P3P4-P6P7-P9P10-P10
July 2009 Doc ID 7232 Rev 6 1/10
10
STBV42
High voltage fast-switching NPN power transistor
Features
■ High voltage capability
■ Low spread of dynamic parameters
■ Very high switching speed
Applications
■ Compact fluorescent lamps (CFLs)
■ SMPS for battery charger
Description
The device is manufactured using high voltage
multi epitaxial planar technology for high switching
speeds and high voltage capability. It uses a
cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.
The STBV42G and STBV42G-AP are supplied
using halogen-free molding compound.
Figure 1. Internal schematic diagram
TO-92
TO-92AP
Table 1. Device summary
Order codes Marking Package Packaging
STBV42 BV42 TO-92 Bulk
STBV42-AP BV42 TO-92AP Ammopack
STBV42G BV42G TO-92 Bulk
STBV42G-AP BV42G TO-92AP Ammopack
www.st.com
Electrical ratings STBV42
2/10 Doc ID 7232 Rev 6
1 Electrical ratings
Table 2. Absolute maximum ratings
Table 3. Thermal data
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
BE
= 0) 700 V
V
CEO
Collector-emitter voltage (I
B
= 0) 400 V
V
EBO
Emitter-base voltage (I
C
= 0) 9 V
I
C
Collector current 1 A
I
CM
Collector peak current (t
P
< 5 ms) 2 A
I
B
Base current 0.5 A
I
BM
Base peak current (t
P
< 5 ms) 1 A
P
TOT
Total dissipation at T
c
= 25 °C 1 W
T
stg
Storage temperature -65 to 150
°C
T
J
Max. operating junction temperature 150
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case__________max 125 °C/W
STBV42 Electrical characteristics
Doc ID 7232 Rev 6 3/10
2 Electrical characteristics
(T
C
= 25 °C; unless otherwise specified)
Table 4.
Electrical characteristics
2.1 Electrical characteristics (curves)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CES
Collector cut-off current
(V
BE
= 0)
V
CE
= 700 V
V
CE
= 700 V T
C
= 125 °C
1
5
mA
mA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 9 V 1 mA
V
CEO(sus)
(1)
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
Collector-emitter sustaining
voltage (I
B
= 0)
I
C
= 1 mA 400 V
V
CE(sat)
(1)
Collector-emitter saturation
voltage
I
C
= 0.25 A I
B
= 50 mA
I
C
= 0.5 A I
B
= 125 mA
I
C
= 0.75 A I
B
= 250 mA
0.2
0.3
0.4
0.5
1
1.5
V
V
V
V
BE(sat)
(1)
Base-emitter saturation
voltage
I
C
= 0.25 A I
B
= 50 mA
I
C
= 0.5 A I
B
= 125 mA
1
1.2
V
V
h
FE
(1)
DC current gain
I
C
= 0.5 mA V
CE
= 2 V
I
C
= 0.4 A V
CE
= 5 V
I
C
= 0.8 A V
CE
= 5 V
12
10
5
30
20
t
f
Inductive Load
Fall time
I
C
= 0.25 A _ V
clamp
= 300 V
I
B1
= -I
B2
= 50 mA
L
= 3 mH Figure 9
0.3 µs
Figure 2. Safe operating area Figure 3. Derating curve
P1-P3P4-P6P7-P9P10-P10

STBV42

Mfr. #:
Buy STBV42
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT NPN Hi-Volt Fast Sw
Lifecycle:
New from this manufacturer.
Delivery:
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