VS-MBRB1035TRR-M3

VS-MBRB1035-M3, VS-MBRB1045-M3
www.vishay.com
Vishay Semiconductors
Revision: 02-Nov-17
1
Document Number: 96393
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 10 A
FEATURES
150 °C T
J
operation
TO-220 and D
2
PAK packages
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Guard ring for enhanced ruggedness and long term
reliability
Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
Designed and qualified according to JEDEC
®
-JESD 47
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This Schottky rectifier has been optimized for low reverse
leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRIMARY CHARACTERISTICS
I
F(AV)
10 A
V
R
35 V, 45 V
V
F
at I
F
0.57 V
I
RM
15 mA at 125 °C
T
J
max. 150 °C
E
AS
8 mJ
Package D
2
PAK (TO-263AB)
Circuit configuration Single
Anode
1
3
Base
cathode
2
N/C
D
2
PAK (TO-263AB)
1
2
3
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 10
A
I
FRM
T
C
= 135 °C 20
V
RRM
35/45 V
I
FSM
t
p
= 5 μs sine 1060 A
V
F
10 A
pk
, T
J
= 125 °C 0.57 V
T
J
Range -65 to +150
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRB1035-M3 VS-MBRB1045-M3 UNITS
Maximum DC reverse voltage V
R
35 45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 135 °C, rated V
R
10
A
Peak repetitive forward current I
FRM
Rated V
R
, square wave, 20 kHz, T
C
= 135 °C 20
Non-repetitive surge current I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
1060
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
150
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 2 A, L = 4 mH 8 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
2A
VS-MBRB1035-M3, VS-MBRB1045-M3
www.vishay.com
Vishay Semiconductors
Revision: 02-Nov-17
2
Document Number: 96393
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
(1)
20 A T
J
= 25 °C 0.84
V10 A
T
J
= 125 °C
0.57
20 A 0.72
Maximum instantaneous reverse
current
I
RM
(1)
T
J
= 25 °C
Rated DC voltage
0.1
mA
T
J
= 125 °C 15
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.354 V
Forward slope resistance r
t
17.6 m
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25
°C
600 pF
Typical series inductance L
S
Measured from top of terminal to mounting plane 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
-65 to 150
°C
Maximum storage temperature range T
Stg
-65 to 175
Maximum thermal resistance,
junction to case
R
thJC
DC operation 2.0
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth, and greased
(Only for TO-220)
0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style D
2
PAK (TO-263AB)
MBRB1035
MBRB1045
VS-MBRB1035-M3, VS-MBRB1045-M3
www.vishay.com
Vishay Semiconductors
Revision: 02-Nov-17
3
Document Number: 96393
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
10
100
I
F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.4
0.6
1.0
1.4
1.8
0.8
1.2
1.6
0.2
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.0001
0.001
1
10
100
0.1
0.01
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
1051520
40
45
25 30 35
0
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
2010 30 40
50
0
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
100 10
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)

VS-MBRB1035TRR-M3

Mfr. #:
Manufacturer:
Vishay
Description:
Schottky Diodes & Rectifiers Schottky - D2PAK-e3
Lifecycle:
New from this manufacturer.
Delivery:
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