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20070912a
Advanced Technical Information
MWI 300-17 E9
IXYS reserves the right to change limits, test conditions and dimensions.IXYS reserves the right to change limits, test conditions and dimensions.
I
C80
= 350 A
V
CES
= 1700 V
V
CE(sat) typ.
= 2.3 V
IGBT Modules
Sixpack
NPT
3
IGBT
Features
€
€
NPT
3
IGBT technology
€
€
low saturation voltage
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€
low switching losses
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€
square RBSOA, no latch up
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€
high short circuit capability
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€
positive temperature coefficient for
easy parallelling
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€
MOS input, voltage controlled
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€
ultra fast free wheeling diodes
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€
solderable pins for PCB mounting
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€
package with copper base plate
Advantages
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€
space savings
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€
reduced protection circuits
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€
package designed for wave soldering
Typical Applications
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€
AC motor control
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€
AC servo and robot drives
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€
power supplies
IGBTs
Symbol Conditions Maximum Ratings
V
CES
T
VJ
= 25°C to 125°C 1700 V
V
GES
±
20 V
I
C25
T
C
= 25°C 500 A
I
C80
T
C
= 80°C 350 A
RBSOA R
G
= 3.3 Ω; T
VJ
= 125°C I
CM
= 700 A
Clamped inductive load; L = 100 µH V
CEK
≤ V
CES
t
SC
V
CE
= 1200 V; V
GE
=
±
15 V; R
G
= 3.3 Ω;10µs
(SCSOA) T
VJ
= 125°C; non-repetitive; V
CEmax
< V
CES
P
tot
T
C
= 25°C 2.2 kW
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
I
C
= 300 A; V
GE
= 15 V; T
VJ
= 25°C 2.3 2.7 V
T
VJ
= 125°C 2.7 3.2 V
V
GE(th)
I
C
= 30 mA; V
GE
= V
CE
4.5 6.5 V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C 0.5 1 mA
T
VJ
= 125°C 7 22 mA
I
GES
V
CE
= 0 V; V
GE
=
±
20 V 1.5 µA
t
d(on)
180 ns
t
r
110 ns
t
d(off)
500 ns
t
f
110 ns
E
on
100 mJ
E
off
80 mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz 33 nF
Q
Gon
V
CE
= 900 V; V
GE
= 15 V; I
C
= 300 A 2.6 µC
R
thJC
0.057 K/W
Inductive load, T
VJ
= 125°C
V
CE
= 900 V; I
C
= 300 A
V
GE
=
±
15 V; R
G
= 3.3 Ω
642
531
272217
252015
231813
241914
7/8
9/10
11/12
262116
28
29
See outline drawing for pin arrangement
E72873
