Characteristics FERD40U45C
2/10 DocID024891 Rev 1
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
T
j
(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode2) x R
th(c)
.
To evaluate the conduction losses use the following equation:
P = 0.28 x I
F(AV)
+ 0.009 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values, per diode at 25° C, unless otherwise stated)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 45 V
I
F(RMS)
Forward rms current 40 A
I
F(AV)
Average forward current, = 0.5
T
c
=150° C
T
c
=145° C
Per diode
Per device
20
40
A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 275 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction
temperature
(1)
TO-220AB, D
2
PAK
175
°C
D
2
PAK (DC forward current without
reverse bias, t = 1 hour)
200
1. condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j a–
--------------------------
Table 3. Thermal resistances
Symbol Parameter Value Unit
R
th (j-c)
Junction to case
Per diode
Total
1.6
1.1
°C/W
R
th(c)
Coupling 0.5 °C/W
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25° C
V
R
= V
RRM
1800 µA
T
j
= 125° C 50 100 mA
V
F
(2)
Forward voltage drop
T
j
= 25° C
I
F
= 10 A
0.35 0.385
V
T
j
= 125° C 0.31 0.34
T
j
= 25° C
I
F
= 20 A
0.42 0.46
T
j
= 125° C 0.42 0.46
1. Pulse test: t
p
= 5 ms, < 2%
2. Pulse test: t
p
= 380 µs, < 2%
