IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
I
C
= I
C90
; V
CE
= 10 V, 16 23 S
Note 2
C
ies
3600 pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz 260 pF
C
res
75 pF
Q
g
120 nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
33 nC
Q
gc
49 nC
t
d(on)
36 ns
t
ri
27 ns
t
d(off)
160 300 ns
t
fi
180 300 ns
E
off
59mJ
t
d(on)
38 ns
t
ri
29 ns
E
on
2.5 mJ
t
d(off)
240 ns
t
fi
340 ns
E
off
9mJ
R
thJC
0.42 K/W
R
thCK
(TO-247) 0.25 K/W
Inductive load, T
J
= 125
°°
°°
°C
I
C
= I
C90
, V
GE
= 15 V
R
G
= 5 Ω, V
CE
= 0.8 V
CES
Note 3
TO-247 AD Outline (IXSH)
Inductive load, T
J
= 25
°°
°°
°C
I
C
= I
C90
, V
GE
= 15 V
R
G
= 5 Ω
V
CE
= 0.8 V
CES
Note 3
Notes: 1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
3. Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
.
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-268 Outline (IXST)
IXSH 35N120B
IXST 35N120B
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A
1
2.7 2.9 .106 .114
A
2
.02 .25 .001 .010
b 1.15 1.45 .045 .057
b
2
1.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E
1
13.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
