DATA SHEET
Product specification
Supersedes data of 1996 Jun 05
1999 Nov 16
DISCRETE SEMICONDUCTORS
BYD37 series
Fast soft-recovery
controlled avalanche rectifiers
b
ook, halfpage
M3D121
1999 Nov 16 2
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD37 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Smallest surface mount rectifier
outline
Shipped in 8 mm embossed tape.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1)
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
MAM061
ka
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYD37D 200 V
BYD37G 400 V
BYD37J 600 V
BYD37K 800 V
BYD37M 1000 V
V
R
continuous reverse voltage
BYD37D 200 V
BYD37G 400 V
BYD37J 600 V
BYD37K 800 V
BYD37M 1000 V
I
F(AV)
average forward current T
tp
= 105 °C; see Fig.2;
averaged over any 20 ms period;
see also Fig.6
1.5 A
I
F(AV)
average forward current T
amb
=60°C; PCB mounting (see
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
0.6 A
I
FRM
repetitive peak forward current T
tp
= 105 °C; see Fig.4 13 A
T
amb
=60°C; see Fig.5 5.5 A
I
FSM
non-repetitive peak forward current t = 10 ms half sine wave; T
j
=T
j max
prior to surge; V
R
=V
RRMmax
20 A
1999 Nov 16 3
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD37 series
ELECTRICAL CHARACTERISTICS
T
j
=25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 µm, see Fig.11.
For more information please refer to the
“General Part of associated Handbook”
.
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; T
j
=T
j max
prior to
surge; inductive load switched off
BYD37D to J 10 mJ
BYD37K and M 7mJ
T
stg
storage temperature 65 +175 °C
T
j
junction temperature see Fig.7 65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage I
F
= 1 A; T
j
=T
j max
;
see Fig.8
−−1.1 V
I
F
=1A;
see Fig.8
−−1.3 V
V
(BR)R
reverse avalanche breakdown
voltage
I
R
= 0.1 mA
BYD37D 300 −−V
BYD37G 500 −−V
BYD37J 700 −−V
BYD37K 900 −−V
BYD37M 1100 −−V
I
R
reverse current V
R
=V
RRMmax
; see Fig.9 −− 1µA
V
R
=V
RRMmax
;
T
j
= 165 °C; see Fig.9
−−100 µA
t
rr
reverse recovery time when switched from
I
F
= 0.5 A to I
R
=1A;
measured at I
R
= 0.25A;
see Fig.12
BYD37D to J −−250 ns
BYD37K and M −−300 ns
C
d
diode capacitance f = 1 MHz; V
R
=0;
see Fig.10
20 pF
maximum slope of reverse recovery
current
when switched from
I
F
=1AtoV
R
30 V and
dI
F
/dt = 1A/µs;
see Fig.13
BYD37D to J −− 6A/µs
BYD37K and M −− 5A/µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point 30 K/W
R
th j-a
thermal resistance from junction to ambient note 1 150 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
dI
R
dt
--------

BYD37M,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
DIODE AVALANCHE 1KV 600MA MELF
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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