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AON6998

P1-P3P4-P6P7-P9P10-P10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
0 1 2 3 4 5
I
D
(A)
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
0
1
2
3
4
0 5 10 15 20 25 30
R
DS(ON)
(m
Ω
)
I
D
(A)
Figure 3: On
-
Resistance vs. Drain Current and Gate
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On
-
Resistance vs. Junction Temperature
V
GS
=4.5V
I
D
=20A
V
GS
=10V
I
D
=20A
25°C
125°C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
0
20
40
60
80
100
0 1 2 3 4 5
I
D
(A)
V
DS
(Volts)
Figure 1: On-Region Characteristics (Note E)
V
GS
=2.5V
4.5V
10V
3V
D
Figure 3: On
-
Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
I
S
(A)
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
Figure 4: On
-
Resistance vs. Junction Temperature
(Note E)
0
2
4
6
8
10
2 4 6 8 10
R
DS(ON)
(m
Ω
)
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
I
D
=20A
25°C
125°C
Rev.1.0: December 2014
www.aosmd.com Page 7 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 10 20 30 40
V
GS
(Volts)
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25 30
Capacitance (pF)
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
0
100
200
300
400
500
0.000010.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
C
oss
C
rss
V
DS
=15V
I
D
=20A
T
J(Max)
=150°C
T
C
=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
I
D
(Amps)
V
DS
(Volts)
V
> or equal
to 4.5V
10µs
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100µs
10ms
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Z
θ
JC
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
V
GS
> or equal
to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
R
θJC
=4°C/W
T
on
T
P
D
Rev.1.0: December 2014
www.aosmd.com Page 8 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
0 25 50 75 100 125 150
Power Dissipation (W)
T
CASE
(
°
C)
Figure 12: Power De-rating (Note F)
0
20
40
60
80
100
0 25 50 75 100 125 150
Current rating I
D
(A)
T
CASE
(
°
C)
Figure 13: Current De-rating (Note F)
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
T
A
=25°C
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
Z
θ
JA
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
R
θJA
=65°C/W
T
on
T
P
D
Rev.1.0: December 2014
www.aosmd.com Page 9 of 10
P1-P3P4-P6P7-P9P10-P10

AON6998

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Description:
MOSFET 2N-CH 30V 19A/26A DFN
Lifecycle:
New from this manufacturer.
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