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Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
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LFPAK56D
BUK9K13-60E
Dual N-channel 60 V, 12.5 mΩ logic level MOSFET
2 September 2015 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
Dual MOSFET
Q101 Compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with V
GS(th)
rating of greater than 0.5 V at 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 60 V
I
D
drain current V
GS
= 5 V; T
mb
= 25 °C; Fig. 2 [1] - - 40 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 1 - - 64 W
Static characteristics FET1 and FET2
R
DSon
drain-source on-state
resistance
V
GS
= 5 V; I
D
= 10 A; T
j
= 25 °C; Fig. 11 - 10 12.5
Dynamic characteristics FET1 and FET2
Q
GD
gate-drain charge I
D
= 10 A; V
DS
= 48 V; V
GS
= 5 V;
T
j
= 25 °C; Fig. 13; Fig. 14
- 7.9 - nC
[1] Continuous current is limited by package
NXP Semiconductors
BUK9K13-60E
Dual N-channel 60 V, 12.5 mΩ logic level MOSFET
BUK9K13-60E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 2 September 2015 2 / 13
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 S1 source1
2 G1 gate1
3 S2 source2
4 G2 gate2
5 D2 drain2
6 D2 drain2
7 D1 drain1
8 D1 drain1
321 4
678 5
LFPAK56D (SOT1205)
D1
mbk725
G1S1
D1
D2
G2S2
D2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BUK9K13-60E LFPAK56D Plastic single ended surface mounted package
(LFPAK56D); 8 leads
SOT1205
7. Marking
Table 4. Marking codes
Type number Marking code
BUK9K13-60E 91360E
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 60 V
V
DGR
drain-gate voltage R
GS
= 20 kΩ - 60 V
T
j
≤ 175 °C; DC -10 10 VV
GS
gate-source voltage
T
j
≤ 175 °C; Pulsed [1][2] -15 15 V
P
tot
total power dissipation T
mb
= 25 °C; Fig. 1 - 64 W
T
mb
= 25 °C; V
GS
= 5 V; Fig. 2 [3] - 40 AI
D
drain current
T
mb
= 100 °C; V
GS
= 5 V; Fig. 2 - 33 A

BUK9K13-60EX

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET BUK9K13-60E/LFPAK56D/REEL 7" Q
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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