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DMN2050LFDB-13

P1-P3P4-P6
DMN2050LFDB
Document number: DS36473 Rev. 2 - 2
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMN2050LFDB
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
20V
45m @ V
GS
= 4.5V
4.5A
55m @ V
GS
= 2.5V
4.1A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN2020-6 Type B
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN2050LFDB -7 DFN2020-6 Type B 3,000/Tape & Reel
DMN2050LFDB -13 DFN2020-6 Type B 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Bottom View
Internal Schematic
M5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
S1
G1
D1
D2
S2
G2
D1
D2
Pin1
M5
D1
S1
G1
D2
S2
G
2
DMN2050LFDB
Document number: DS36473 Rev. 2 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMN2050LFDB
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±12 V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
3.3
2.6
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
4.5
3.6
A
Maximum Continuous Body Diode Forward Current (Note 6)
I
S
1 A
Pulsed Drain Current (10s pulse, duty cycle = 1%)
I
DM
25 A
Avalanche Current (Note 7) L = 0.1mH
I
AR
9 A
Repetitive Avalanche Energy (Note 7) L = 0.1mH
E
AR
4.5 mJ
Thermal Characteristics
Characteristic Symbol
V
alue Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.73
W
T
A
= +70°C
0.46
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
JA
173
°C/W
t<10s 110
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.42
W
T
A
= +70°C
0.90
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
JA
89
°C/W
t<10s 57
Thermal Resistance, Junction to Case (Note 6)
R
JC
18
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
20
–
– V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
– –
1.0 A
V
DS
= 16V, V
GS
= 0V
Gate-Source Leakage
I
GSS
– –
±100 nA
V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS
(
th
)
0.4 – 1.0 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS (ON)
–
28 45
m
V
GS
= 4.5V, I
D
= 5.0A
–
36 55
V
GS
= 2.5V, I
D
= 4.2A
Forward Transfer Admittance
|Y
fs
|
–
9 – S
V
DS
= 5V, I
D
= 5A
Diode Forward Voltage
V
SD
–
0.75 1.0 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
– 389 –
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
– 72 –
pF
Reverse Transfer Capacitance
C
rss
– 63 –
pF
Gate Resistance
R
g
– 2.1 –
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
– 5.7 –
nC
V
DS
= 15V, I
D
= 5.8A
Total Gate Charge (V
GS
= 10V) Q
g
– 12 –
nC
Gate-Source Charge
Q
g
s
– 0.7 –
nC
Gate-Drain Charge
Q
g
d
– 1.5 –
nC
Turn-On Delay Time
t
D
(
on
)
– 5 –
ns
V
DS
= 10V, V
GS
= 4.5V,
R
G
= 6, I
DS
= 1A
Turn-On Rise Time
t
r
– 8 –
ns
Turn-Off Delay Time
t
D
(
off
)
– 25 –
ns
Turn-Off Fall Time
t
f
– 8 –
ns
Reverse Recovery Time
t
r
–
8.5
–
ns
I
F
= 5A, di/dt = 100A/s
Reverse Recovery Charge
Q
r
– 2.1
–
nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN2050LFDB
Document number: DS36473 Rev. 2 - 2
3 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMN2050LFDB
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V= 1.2V
GS
V= 1.5V
GS
V= 2.0V
GS
V= 3.0V
GS
V= 10V
GS
V= 2.5V
GS
V= 3.5V
GS
0
2
4
6
8
10
12
14
16
18
20
0 0.5 1 1.5 2 2.5 3
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V= 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0
0.02
0.04
0.06
0.08
0.1
0 2 4 6 8 101214161820
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
V = 1.8V
GS
V = 2.5V
GS
V = 4.5V
GS
0
0.03
0.06
0.09
0.12
0.15
024681012
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristics
R
,
D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
I= 5.0A
D
I= 4.2A
D
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0 2 4 6 8 10 12 14 16 18 20
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
R, DRAIN-S
O
URCE
O
N-RESISTANCE ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
R
,
D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
V=V
I= 10A
GS
D
10
V=V
I = 5.0A
GS
D
5
P1-P3P4-P6

DMN2050LFDB-13

Mfr. #:
Buy DMN2050LFDB-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET DUAL N-CH EH MODE 20V 45mOhm 4.5A
Lifecycle:
New from this manufacturer.
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