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Electrical characteristics STD9NM50N - STD9NM50N-1 - STP9NM50N - STF9NM50N
4/17
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min Typ Max Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 1mA, V
GS
= 0
500 V
dv/dt
(1)
1. Characteristics value at turn off on inductive load
Drain-source voltage slope
Vdd= 400V, Id=7.5A,
Vgs=10V
35 V/ns
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating,Tc = 125°C
1
100
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20V
100 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250µA
234V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 3.7A
0.47 0.56 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min Typ Max Unit
g
fs
(1)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance
V
DS
=15V, I
D
= 3.7A
5S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 50V, f=1MHz, V
GS
=0
570
46
6
pF
pF
pF
C
oss eq.
(2)
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
characteristics
V
GS
=0, V
DS
= 0V to 400V
94 pF
Rg Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20mV
Open drain
6 Ω
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 400V, I
D
= 7.5A
V
GS
=10V
(see Figure 16)
20
4
10
nC
nC
nC
