10 April 2007 Rev 1 1/17
17
STD9NM50N - STD9NM50N-1
STF9NM50N - STP9NM50N
N-channel 500V - 0.47 - 7.5A - TO-220 - TO-220FP - IPAK - DPAK
Second generation MDmesh™ Power MOSFET
Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Applications
Switching application
Internal schematic diagram
Type
V
DSS
(@Tjmax)
R
DS(on)
I
D
STD9NM50N 550V <0.56 7.5A
STD9NM50N-1 550V <0.56 7.5A
STP9NM50N 550V <0.56 7.5A
STF9NM50N 550V <0.56 7.5A
(1)
1. Limited only by maximum temperature allowed
TO-220
DPAK
IPAK
TO-220FP
1
2
3
3
2
1
1
3
1
2
3
www.st.com
Order codes
Part number Marking Package Packaging
STD9NM50N-1 D9NM50N IPAK Tube
STD9NM50N D9NM50N DPAK Tape & reel
STP9NM50N P9NM50N TO-220 Tube
STF9NM50N F9NM50N TO-220FP Tube
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Contents STD9NM50N - STD9NM50N-1 - STP9NM50N - STF9NM50N
2/17
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Obsolete Product(s) - Obsolete Product(s)
STD9NM50N - STD9NM50N-1 - STP9NM50N - STF9NM50N Electrical ratings
3/17
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220
DPAK/IPAK
TO-220FP
V
DS
Drain-source voltage (V
GS
=0)
500 V
V
GS
Gate-source voltage ± 25 V
I
D
Drain current (continuous) at T
C
= 25°C
7.5
7.5
(1)
1. Limited only by maximum temperature allowed
A
I
D
Drain current (continuous) at T
C
= 100°C
5
5
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 30
30
(1)
A
P
TOT
Total dissipation at T
C
= 25°C
70 25 W
dv/dt
(3)
3. I
SD
7.5A, di/dt 400A/µs, V
DD
=80% V
(BR)DSS
Peak diode recovery voltage slope 15 V/ns
V
ISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1s;T
C
=25°C)
-- 2500 V
T
j
T
stg
Operating junction temperature
Storage temperature
-55 to 150 °C
Table 2. Thermal data
Symbol Parameter
TO-220
DPAK/IPAK
TO-220FP Unit
Rthj-case Thermal resistance junction-case max 1.78 5 °C/W
Rthj-amb Thermal resistance junction-amb max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
Table 3. Avalanche characteristics
Symbol Parameter Max value Unit
I
AS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
3A
E
AS
Single pulse avalanche energy
(starting Tj=25°C, I
D
=I
AS
, V
DD
= 50V)
150 mJ

STP9NM50N

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 500V 7.5A TO-220
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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