2SB1375,CLARIONF(M Datasheet 2SB1375,CLARIONF(M | P1-P3

2SB1375

2006-11-21

1

TOSHIBA Transistor Silicon PNP Triple Diffused Type

2SB1375

Audio Frequency Power Amplifier

• Low saturation voltage: V

CE (sat)

= −1.5 V (max)

(I

C

= −2 A, I

B

= −0.2 A)

• High power dissipation: P

C

= 25 W (Tc = 25°C)

• Collector metal (fin) is covered with mold resin

• Complementary to 2SD2012

Absolute Maximum Ratings

(Tc = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage V

CBO

−60 V

Collector-emitter voltage V

CEO

−60 V

Emitter-base voltage V

EBO

−7 V

Collector current I

C

−3 A

Base current I

B

−0.5 A

Ta = 25°C 2.0

Collector power

dissipation

Tc = 25°C

P

C

25

W

Junction temperature T

j

150 °C

Storage temperature range T

stg

−55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-10R1A

Weight: 1.7 g (typ.)

2SB1375

2006-11-21

2

Electrical Characteristics

(Tc = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current I

CBO

V

CB

= −60 V, I

E

= 0 ― ― −10 μA

Emitter cut-off current I

EBO

V

EB

= −7 V, I

C

= 0 ― ― −10 μA

Collector-emitter breakdown voltage V

(BR) CEO

I

C

= −50 mA, I

B

= 0 −60 ― ― V

h

FE (1)

V

CE

= −5 V, I

C

= −0.5 A 100 ― 320

DC current gain

h

FE (2)

V

CE

= −5 V, I

C

= −2 A 15 ― ―

Collector-emitter saturation voltage V

CE (sat)

I

C

= −2 A, I

B

= −0.2 A ― −1.0 −1.5 V

Base-emitter voltage V

BE

V

CE

= −5 V, I

C

= −0.5 A ― −0.75 −1.0 V

Transition frequency f

T

V

CE

= −5 V, I

C

= −0.5 A ― 9 ― MHz

Collector output capacitance C

ob

V

CB

= −10 V, I

E

= 0, f = 1 MHz ― 50 ― pF

Marking

Lot No.

A

line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

B1375

Part No. (or abbreviation code)

2SB1375

2006-11-21

3

Collector current I

C

(A)

Collector-emitter voltage V

CE

(V)

I

C

– V

CE

Collector current I

C

(A)

Collector current I

C

(A)

h

FE

– I

C

DC current gain h

FE

Collector current I

C

(A)

V

CE (sat)

– I

C

Collector-emitter saturation voltage

V

CE

(sat)

(V)

Base-emitter voltage V

BE

(V)

I

C

– V

BE

0

Common emitter

Tc = 25 °C

−3.0

−0.5

−2.0

−3

−4 −6 −5

−30

−100

−50

−70

−90

−20

I

B

= −10 mA

−60

−80

−2 −1

−1.0

−1.5

−2.5

−40

Common emitter

V

CE

= −5 V

0

−3

−2

−0.8 −1.2 −2.0

Tc = 100°C

25

−1.6 −0.4

0

−1

−25

Tc = 100°C

Common emitter

I

C

/I

B

= 10

−2

−0.05

−0.1

−0.3

−0.5

−1

−0.03

−0.03 −0.1 −1 −5 −3 −0.3 −0.01

−25

25

−0.01

−0.03

100

Common emitter

V

CE

= −5 V

30

50

500

−0.1 −1 −5

−25

25

Tc = 100°C

−3 −0.3 −0.01

300

20

2SB1375,CLARIONF(M

2SB1375,CLARIONF(M

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