1N5059TAP

1N5059, 1N5060, 1N5061, 1N5062
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 12-Sep-12
1
Document Number: 86000
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Standard Avalanche Sinterglass Diode
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
Glass passivated junction
Hermetically sealed axial-leaded glass
envelope
Controlled avalanche characteristics
Low reverse current
High surge current loading
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Rectification diode, general purpose
949539
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
1N5062 1N5062TR 5000 per 10" tape and reel 25 000
1N5062 1N5062TAP 5000 per ammopack 25 000
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
1N5059 V
R
= 200 V; I
F(AV)
= 2 A SOD-57
1N5060 V
R
= 400 V; I
F(AV)
= 2 A SOD-57
1N5061 V
R
= 600 V; I
F(AV)
= 2 A SOD-57
1N5062 V
R
= 800 V; I
F(AV)
= 2 A SOD-57
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
1N5059 V
R
= V
RRM
200 V
1N5060 V
R
= V
RRM
400 V
1N5061 V
R
= V
RRM
600 V
1N5062 V
R
= V
RRM
800 V
Peak forward surge current t
p
= 10 ms, half sine wave I
FSM
50 A
Average forward current
T
thJA
= 45 K/W, T
amb
= 50 °C I
F(AV)
2A
T
thJA
= 100 K/W, T
amb
= 75 °C I
F(AV)
0.8 A
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
I
(BR)R
= 1 A, inductive load E
R
20 mJ
Junction and storage temperature range T
j
= T
stg
- 55 to + 175 °C
MAXIMUM THERMAL RESISTANCE (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient
Lead length l = 10 mm, T
L
= constant R
thJA
45 K/W
On PC board with spacing 25 mm R
thJA
100 K/W
1N5059, 1N5060, 1N5061, 1N5062
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 12-Sep-12
2
Document Number: 86000
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 C, unless otherwise specified)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 2 - Max. Reverse Current vs. Junction Temperature
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Forward Current vs. Forward Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX UNIT
Forward voltage
I
F
= 1 A V
F
--1V
I
F
= 2.5 A V
F
- - 1.15 V
Reverse current
V
R
= V
RRM
I
R
--1μA
V
R
= V
RRM
, T
j
= 100 °C I
R
- - 10 μA
V
R
= V
RRM
, T
j
= 150 °C I
R
- - 100 μA
Breakdown voltage I
R
= 100 μA
1N5059 V
(BR)R
225 - 1600 V
1N5060 V
(BR)R
450 - 1600 V
1N5061 V
(BR)R
650 - 1600 V
1N5062 V
(BR)R
900 - 1600 V
Diode capacitance V
R
= 0 V, f = 1 MHz C
D
-40-pF
Reverse recovery time I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A t
rr
--4μs
0
40
80
120
160
200
25 50 75 100 125 150 175
T
j
- Junction Temperature ( °C)
15764
V
R
=V
RRM
P - Reverse Power Dissipation ( mW )
R
160 K/W
100 K/W
45 K/W
R
thJA
=
1N5062
1N5061
1N5060
1N5059
0.1
1
10
100
1000
15765
V
R
=V
RRM
I - Reverse Current ( µA)
R
25 50 75 100 125 150 175
T
j
- Junction Temperature ( °C)
15763_1
V
R
=V
RRM
half sinewave
R
thJA
=4 5 K/W
l =10 mm
R
thJA
= 100 K/W
PCB :d=2 5m m
02 04 06 08 0 100 120 140 160 180
T
amb
- Ambient T emperature (°C)
0.0
1.0
1.5
2.0
2.5
3.0
I- Average Forward Current (A)
FA V
0.5
I - Forward Current ( A )
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
V
F
- Forward Voltage(V)
15762
F
T
j
=25°C
T
j
=175°C
0.01
0.1
1
10
100
0.001
1N5059, 1N5060, 1N5061, 1N5062
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 12-Sep-12
3
Document Number: 86000
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
0
10
20
30
40
50
0.1 1 10 100
V
R
-ReverseVoltage(V)15766
C - Diode Capacitance ( pF )
D
f=1MHz
20543
3.6 (0.142) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
0.82 (0.032) max.

1N5059TAP

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 2.0 Amp 200 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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