ZXM62P03G
ISSUE 2 - DECEMBER 2002
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
-30 V
I
D
=-250µA, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
-1 AV
DS
=-30V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
=⫾20V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
-1.0 V I
D
=-250A, V
DS
=V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.15
0.23
⍀
⍀
V
GS
=-10V, I
D
=-1.6A
V
GS
=-4.5V, I
D
=-0.8A
Forward Transconductance (1)(3) g
fs
1.1 S V
DS
=-10V,I
D
=-0.8A
DYNAMIC (3)
Input Capacitance C
iss
330 pF
V
DS
=-25V, V
GS
=0V,
f=1MHz
Output Capacitance C
oss
120 pF
Reverse Transfer Capacitance C
rss
45 pF
SWITCHING(2) (3)
Turn-On Delay Time t
d(on)
2.8 ns
V
DD
=-15V, I
D
=-1.6A
R
G
=6.2⍀, V
GS
=-10V
Rise Time t
r
6.4 ns
Turn-Off Delay Time t
d(off)
13.9 ns
Fall Time t
f
10.3 ns
Total Gate Charge Q
g
10.2 nC
V
DS
=-24V,V
GS
=-10V,
I
D
=-1.6A
Gate-Source Charge Q
gs
1.5 nC
Gate-Drain Charge Q
gd
3nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
SD
-0.95 V T
J
=25⬚C, I
S
=-1.6A,
V
GS
=0V
Reverse Recovery Time (3) t
rr
19.9 ns T
J
=25⬚C, I
F
=-1.6A,
di/dt= 100A/s
Reverse Recovery Charge (3) Q
rr
13 nC
ELECTRICAL CHARACTERISTICS (at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width ⱕ300µ s. Duty cycle ⱕ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
