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IPD50N03S4L06ATMA1
P1-P3
P4-P6
P7-P9
IPD50N03S4L-06
1 Power dissipation
2 Drain current
P
tot
= f(
T
C
);
V
GS
≥ 6 V
I
D
= f(
T
C
);
V
GS
≥ 6 V
I
D
= f(
V
DS
);
T
C
= 25 °C;
D
= 0
Z
thJC
= f(
t
p
)
parameter:
t
p
parameter:
D
=
t
p
/
T
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1
1
10
100
V
DS
[V]
I
D
[A]
single pulse
0.01
0.05
0.1
0.5
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
t
p
[s]
Z
thJC
[K/W]
0
10
20
30
40
50
60
0
50
100
150
200
T
C
[°C]
P
tot
[W]
0
10
20
30
40
50
60
0
50
100
150
200
T
C
[°C]
I
D
[A]
Rev. 1.1
page 4
2010-10-05
IPD50N03S4L-06
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I
D
= f(
V
DS
);
T
j
= 25 °C
R
DS(on)
= f(
I
D
);
T
j
= 25 °C
parameter:
V
GS
parameter:
V
GS
I
D
= f(
V
GS
);
V
DS
= 6V
R
DS(on)
= f(
T
j
);
I
D
= 50 A;
V
GS
= 10 V
parameter:
T
j
3
4
5
6
7
8
9
-60
-20
20
60
100
140
180
T
j
[°C]
R
DS(on)
[m
W
]
3 V
3:5 V
4 V
4:5 V
5 V
10 V
0
40
80
120
160
200
0
1
2
3
4
V
DS
[V]
I
D
[A]
3 V
3.5 V
4 V
4.5 V
5 V
10 V
0
10
20
30
40
0
40
80
120
160
200
I
D
[A]
R
DS(on)
[m
W
]
-55 °C
25 °C
175 °C
0
40
80
120
160
200
0
1
2
3
4
5
6
V
GS
[V]
I
D
[A]
Rev. 1.1
page 5
2010-10-05
IPD50N03S4L-06
9 Typ. gate threshold vo
ltage
10 Typ. capacitances
V
GS(th)
= f(
T
j
);
V
GS
=
V
DS
C
= f(
V
DS
);
V
GS
= 0 V;
f
= 1 MHz
parameter:
I
D
IF = f(V
SD
)
I
A S
= f(
t
AV
)
parameter:
T
j
parameter: T
j(start)
20 µA
200 µA
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
-60
-20
20
60
100
140
180
T
j
[°C]
V
GS(th)
[V]
Ciss
Coss
Crss
10
2
10
3
10
4
0
5
10
15
20
25
30
V
DS
[V]
C
[pF]
10
1
25 °C
100 °C
150 °C
0.1
1
10
100
1000
0.1
1
10
100
100
0
t
AV
[µs]
I
AV
[A]
25 °C
175 °C
10
0
10
1
10
2
10
3
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
[V]
I
F
[A]
Rev. 1.1
page 6
2010-10-05
P1-P3
P4-P6
P7-P9
IPD50N03S4L06ATMA1
Mfr. #:
Buy IPD50N03S4L06ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL_30/40V
Lifecycle:
New from this manufacturer.
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