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PT26-51B/TR8

P1-P3P4-P6P7-P9P10-P10
Everlight Electronics Co., Ltd. http:\\www.everlight.com Rev 1 Page: 1 of 10
Device No：DTT-026-269 Prepared date：03-06-2007 Prepared by：Posen Hsu
Technical Data Sheet
1.6mm Round Subminiature Side Looking Phototransiator
PT26-51B/TR8
Features
․Fast response time
․High photo sensitivity
․Small junction capacitance
․Package in 8mm tape on 7” diameter reels.
․Pb free
․The product itself will remain within RoHS compliant version.
Descriptions
․PT26-51B/TR8(ES) is a phototransistor in miniature SMD package
which is molded in a black with spherical top view lens.
The device is Spectrally matched to infrared emitting diode.
Applications
․Miniature switch
․Counters and sorter
․Position sensor
․Infrared applied system
Device Selection Guide
Chip
LED Part No.
Material
Lens Color
PT Silicon Black
Everlight Electronics Co., Ltd. http:\\www.everlight.com Rev 1 Page: 2 of 10
Device No：DTT-026-269 Prepared date：03-06-2007 Prepared by：Posen Hsu
Collector
Emitter
PT26-51B/TR8
Package Dimensions
Notes: 1.All dimensions are in millimeters
2.Tolerances unless dimensions ±0.1mm
Absolute Maximum Ratings (Ta=25℃)
Parameter Symbol Rating Units
Collector-Emitter Voltage V
CEO
30
V
Emitter-Collector-Voltage V
ECO
5
V
Collector Current I
C
20
mA
Operating Temperature T
opr
-25 ~ +85
℃
Storage Temperature T
stg
-40 ~ +100
℃
Soldering Temperature T
sol
260
℃
Power Dissipation at(or below)
25℃Free Air Temperature
P
c
75
mW
Notes: *1:Soldering time≦5 seconds.
Everlight Electronics Co., Ltd. http:\\www.everlight.com Rev 1 Page: 3 of 10
Device No：DTT-026-269 Prepared date：03-06-2007 Prepared by：Posen Hsu
PT26-51B/TR8
Electro-Optical Characteristics (Ta=25℃)
Parameter Symbol Condition Min Typ Max Unit
Rang Of Spectral Bandwidth
λ
0.5
--- 730 --- 1100 nm
Wavelength Of Peak Sensitivity
λ
P
--- --- 940 --- nm
Collector-Emitter Breakdown
Voltage
BV
CEO
I
C
=500μA
Ee=0mW/cm
2
60 --- --- V
Emitter-Collector Breakdown
Voltage
BV
ECO
I
E
=50μA
Ee=0mW/cm
2
7 --- --- V
Collector-Emitter Saturation
Voltage
V
CE(sat)
I
C
=5mA
Ee=1mW/cm
2
--- --- 0.4 V
Collector Dark Current I
CEO
V
CE
=20V
Ee=0mW/cm
2
--- --- 100 nA
On State Collector Current I
C(ON)
V
CE
=5V
Ee=1mW /cm
2
λ
P
=940nm
--- 1.0 --- mA
Rise Time t
r
--- 15 ---
Fall Time t
f
V
CE
=5V
I
C
=1mA
R
L
=1000Ω
--- 15 ---
μS
P1-P3P4-P6P7-P9P10-P10

PT26-51B/TR8

Mfr. #:
Buy PT26-51B/TR8
Manufacturer:
Description:
Optical Sensors Phototransistors Phototransisto
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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