EAILP03RDAA5 Datasheet EAILP03RDAA5 | P1-P3

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3mm Infrared LED

EAILP03RDAA5

Features

• High reliability

• 2.54mm lead spacing

• Low forward voltage

• Good spectral matching to Si photodetector

• High radiant intensity

• Pb free

•The product itself will remain within RoHS compliant version.

Description

Everlight Americas infrared emitting (EAILP03RDAA5)

is a high intensity diode, molded in a blue transparent plastic package.

The device is spectrally matched with phototransistor, photodiode and infrared receive module.

Applications

•Infrared applied system

DATASHEET

3mm Infrared LED

EAILP03RDAA5

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Notes: *1:I

FP

Conditions--Pulse Width≦100μs and Duty≦1%.

*2:Soldering time≦5 seconds.

Device Selection Guide

LED Part No. Chip Material Lens Color

EAILP03RDAA5

GaAlAs Blue

A

bsolute Maximum Ratings (Ta=25 )℃

Parameter Symbol Rating Unit

Continuous Forward

Current

I

F

100 mA

Peak Forward Current *1 I

FP

1.0 A

Reverse Voltage V

R

5 V

Operating Temperature T

opr

-40~ +85

℃

Storage Temperature

T

stg

-40 ~ +100

℃

Soldering Temperature *2 T

sol

260

℃

Power Dissipation at(or

below)

25℃Free Air Temperature

P

d

150 mW

DATASHEET

3mm Infrared LED

EAILP03RDAA5

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Electro-Optical Characteristics (Ta=25℃)

Parameter

Symbol

Min. Typ. Max. Unit Condition

Radiant Intensity

IE 4.0 7.0 - mW/sr I

F

=20mA

Peak Wavelength

λp - 940 - nm I

F

=20mA

Spectral Bandwidth Δλ - 45 - nm I

F

=20mA

Forward Voltage V

F

- 1.2 1.5 V I

F

=20mA

Reverse Current I

R

- - 10 μA V

R

=5V

View angle 2θ1/2 - 50 - degree I

F

=20mA

EAILP03RDAA5

EAILP03RDAA5

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