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ALM-2812-TR1G

P1-P3P4-P6P7-P9P10-P10
ALM-2812
Dual-Band (2.4-2.5) GHz & (4.9-6) GHz
WLAN Low-Noise Amplier
Data Sheet
Description
Avago Technologies’ ALM-2812 is a dual-band LNA
designed for WLAN applications in the (2.4 - 2.5)GHz
and (4.9-6)GHz frequency ranges. The LNA uses Avago
Technologies’ proprietary GaAs Enhancement-mode
pHEMT process to achieve high-frequency wideband
operation with very low noise gures.
The ALM-2812 has two individual LNAs housed in a
3mm x 3mm package, each one switcheable using a
single CMOS-compatible pin. All matching components
are inside the module. Only one external low frequency
bypass capacitor is required for proper operation,
making it suitable for use in ultra-miniature WLAN cards
and access points.
Surface Mount
3.0 x 3.0 x 1.1 mm
3
MCOB
Features
x Advanced GaAs E-pHEMT
x Low Noise: 0.8dB Typ for 2.4 - 2.5 GHz
x Low Noise: 1.4dB Typ for 4.9 - 6 GHz
x Wide Supply Voltage: 2 to 3.6V
x 50 Ohm matched Input & Output
x High Input P1dB and IIP3
x Power Shutdown Function
x RoHS Compliant
x Small Footprint: 3x3mm
2
x Low Prole: 1.1mm max.
x Minimal External Components
Typical Specications (25°C):
At 2.45 GHz, 3.3V 15mA
x Gain = 16.7 dB
x NF = 0.8 dB
x IIP3 = 6.1 dBm
x IP1dB = -5.8 dBm
At 5.5 GHz, 3.3V 23.4mA
x Gain = 23.2dB
x NF = 1.4 dB
x IIP3 = -2.2 dBm
x IP1dB = -12.8dBm
Note: Package marking provides
orientation and identication
“C” = Product Code
“ML” = Manufacturing Location
“Y” = Year
“WW” = Work Week
“DD” = Day
“XXXX” = Lot Number
YM
O
CMLY
WWDD
XXXX
Top View
LNA I/O’s :
1. RF_OUT_52
3. RF_OUT_24
5. VCC2
6. LNA_ON_24
7. RF_IN_24
9.RF_IN_52
10. LNA_ON_52
11. VCC1
2, 4, 8 & 12.GND
Pin Conguration
Bottom view
2
Absolute Maximum Ratings [1]
Parameter Symbol Units Absolute Maximum
Drain – Source Voltage
[2]
V
DS
V 3.6
2G Drain Current
[2]
I
DS_2G
mA 30
5G Drain Current
[2]
I
DS_5G
mA 45
Total Power Dissipation
[3]
Pdiss W 0.2
RF Input Power Pin max. dBm 5
Channel Temperature T
CH
*C 150
Storage Temperature T
STG
*C -65 to 150
Thermal Resistance
[4]
Tch_b
*C/W 29.9
Note:
5. Distribution data sample size is 18K samples taken from 3 dierent wafers and 3 dierent lots. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower limits.
6. Measurements are made on production test board, which represents a trade-o between optimal Gain, NF, IIP3, IP1dB and VSWR. Circuit losses
have been de-embedded from actual measurements.
Product Consistency Distribution Charts
[5,6]
Notes:
1. Operation of this device above any one of these
parameters may cause permanent damage.
2. Assuming DC quiescent conditions.
3. Board (package belly) temperature TB is 25*C.
Derate 33.4mW/*C for TB > 144 *C.
4. Channel-to-board thermal resistance measured
using 150*C Liquid Crystal Measurement
method.
Stdev = 0.9
+3 Std
0 0.30.60.91.21.5
0
2000
4000
6000
8000
Stdev = 0.3
- 3 Std
+3 Std
15 16 17 18 19
0
2000
4000
6000
8000
10000
Stdev = 0.9
-3 Std
+3 Std
10 12 14 16 18 20 22
0
1000
2000
3000
4000
5000
6000
Stdev = 0.1
+3 Std
0.8 1.1 1.4 1.7 2 2.3
0
2000
4000
6000
8000
Stdev = 0.5
-3 Std
+3 Std
20 21 22 23 24 25 26
0
2000
4000
6000
8000
Stdev = 1.5
-3 Std
-3 Std
16 20 24 28 32
0
2000
4000
6000
8000
Figure 1. Gain @ 2.45GHz; LSL = 15dB, Nominal = 16.7dB, USL = 18.5dB
Figure 2. NF @ 2.45GHz; Nominal = 0.8dB, USL = 1.5dB
Figure 3. Ids @ 2.45GHz; LSL = 11mA, Nominal = 15mA, USL = 21mA
Figure 4. Gain @ 5.5GHz; LSL = 21dB, Nominal = 23.2dB, USL = 25dB
Figure 5. NF @ 5.5GHz; Nominal = 1.4dB, USL = 1.9dB
Figure 6. Ids @ 5.5GHz; LSL = 19mA, Nominal = 23.4mA, USL = 31mA
3
Electrical Specications
[7,8]
TA = 25 *C, DC bias for RF parameter is Vds = 3.3V (unless otherwise specied)
2.4 to 2.5 GHz Band
Parameter and Test Condition Symbol Units
Production
Min
[7,8]
2.45GHz (Typ.)
25 Deg
Production
Max
[7,8]
Gain G dB 15 16.7 18.5
Noise Figure NF dB - 0.8 1.5
Gain Flatness Gf dB 0.1
Input 1dB Compressed Power IP1dB dBm - 5.8
Input 3rd Order Intercept Point IIP3 dBm 6.1
Input Return Loss S11 dB - 10.4
Output Return Loss S22 dB - 16.8
Rejection, out-of-band (refer to the mid-band level
(2.45GHz)
1 GHz dB 26
1.75 GHz dB 7.8
2 GHz dB 4.2
3.2 GHz dB 8.5
4 GHz dB 24.6
Supply Current Ids mA 11 15 21
Shutdown Current @ V_LNA_24_ON = 0V Ish uA 1.5
Supply Voltage Vds V 3.3
4.9 to 6 GHz Band
Parameter and Test Condition Symbol Units
Production
Min
[7,8]
5.5 GHz (Typ.)
25 Deg
Production
Max
[7,8]
Gain G dB 21 23.2 25
Noise Figure NF dB - 1.4 1.9
Gain Flatness Gf dB 0.3
Input 1dB Compressed Power IP1dB dBm - 12.8
Input 3rd Order Intercept Point [1,2] IIP3 dBm - 2.2
Input Return Loss S11 dB - 6.1
Output Return Loss S22 dB - 11.5
Rejection, out-of-band (refer to the mid-band level (5.5
GHz)
3.7 GHz dB 12.7
7.5 GHz dB 7
Supply Current Ids mA 19 23.4 31
Shutdown Current @ V_LNA_ON_52 = 0V Ish uA 2
Supply Voltage Vds V 3.3
Notes:
7. The parameters with an indicated Production Limit (Production Min and Production Max) are tested at our production nal test with no
guardbanding. Production Limits are tighter than Customer Limits to serve as a guardband to guarantee the Customer Limits. Customer Limits
will have the following guardband: Gain =±0.5dB, NF=±0.2dB, Ids=±1mA
8. Production Limits are subject to change with customer consensus and approval. Pricing is subject to change based on yield impact.
P1-P3P4-P6P7-P9P10-P10

ALM-2812-TR1G

Mfr. #:
Buy ALM-2812-TR1G
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier Dual band WLAN LNA
Lifecycle:
New from this manufacturer.
Delivery:
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