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STTH3010W

P1-P3P4-P6P7-P9P10-P10
March 2006 Rev 1 1/10
10
STTH3010
Ultrafast recovery - high voltage diode
Main product characteristics
Features and benefits
■ Ultrafast, soft recovery
■ Very low conduction and switching losses
■ High frequency and/or high pulsed current
operation
■ High reverse voltage capability
■ High junction temperature
■ Insulated package:
–DOP3I
Electrical insulation = 2500 V
RMS
Capacitance = 12 pF
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
Order codes
I
F(AV)
30 A
V
RRM
1000 V
T
j
175° C
V
F
(typ) 1.30 V
t
rr
(typ) 42 ns
Part Number Marking
STTH3010D STTH3010D
STTH3010W STTH3010W
STTH3010PI STTH3010PI
K
K
K
K
A
A
A
A
TO-220AC
STTH3010D
DO-247
STTH3010W
DOP3I
STTH3010PI
www.st.com
Characteristics STTH3010
2/10
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 1.3 x I
F(AV)
+ 0.013 I
F
2
(RMS)
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 1000 V
I
F(RMS)
RMS forward current 50 A
I
F(AV)
Average forward current, δ = 0.5
TO-220 / DO-247 T
c
= 105° C
30 A
DOP3I T
c
= 65° C
I
FRM
Repetitive peak forward current t
p
= 5 µs, F = 5 kHz square 300 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 180 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature 175 °C
Table 2. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-220 / DO-247 1.1
°C/W
DOP3I 1.8
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25° C
V
R
= V
RRM
15
µA
T
j
= 125° C 10 100
V
F
(2)
Forward voltage drop
T
j
= 25° C
I
F
= 30 A
2
VT
j
= 100° C 1.4 1.8
T
j
= 150° C 1.3 1.7
1. Pulse test: t
p
= 5 ms, δ < 2 %
2. Pulse test: t
p
= 380 µs, δ < 2 %
STTH3010 Characteristics
3/10
Table 4. Dynamic characteristics
Symbol Parameter
Test conditions
Min. Typ Max. Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25° C
100
ns
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25° C
53 70
I
F
= 1 A, dI
F
/dt = -200 A/µs,
V
R
= 30 V, T
j
= 25° C
42 55
I
RM
Reverse recovery current
I
F
= 30 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T
j
= 125° C
24 32 A
S Softness factor
I
F
= 30 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T
j
= 125° C
1
t
fr
Forward recovery time
I
F
= 30 A dI
F
/dt = 100 A/µs
V
FR
= 1.5 x V
Fmax
, T
j
= 25° C
450 ns
V
FP
Forward recovery voltage
I
F
= 30 A, dI
F
/dt = 100 A/µs,
T
j
= 25° C
5V
Figure 1. Conduction losses versus
average current
Figure 2. Forward voltage drop versus
forward current
P(W)
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
0 5 10 15 20 25 30 35 40
=0.05
=0.1
=0.2
=0.5
=1
T
I(A)
F(AV)
I(A)
FM
0
20
40
60
80
100
120
140
160
180
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
T
j
=25°C
(Maximum values)
T
j
=150°C
(Maximum values)
T
j
=150°C
(Typical values)
V (V)
FM
Figure 3. Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4. Peak reverse recovery current
versus dI
F
/dt (typical values)
Z/R
th(j-c) th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Single pulse
t (s)
p
I (A)
RM
0
10
20
30
40
50
60
0 50 100 150 200 250 300 350 400 450 500
V
R
=600V
T
j
=125°C
I
F
= 2 x I
F(AV)
I
F
= I
F(AV)
I
F
=0.5 x I
F(AV)
dI /dt(A/µs)
F
P1-P3P4-P6P7-P9P10-P10

STTH3010W

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Manufacturer:
STMicroelectronics
Description:
Diodes - General Purpose, Power, Switching Ultrafast recovery high voltage diode
Lifecycle:
New from this manufacturer.
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