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NSR05F30NXT5G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2010
September, 2010 − Rev. 3
1 Publication Order Number:
NSR05F30/D
NSR05F30NXT5G
Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale
Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher
efficiency and meeting reduced space requirements.
Features
• Low Forward Voltage Drop − 400 mV @ 500 mA
• Low Reverse Current − 15 mA @ 10 V VR
• 500 mA of Continuous Forward Current
• ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
• High Switching Speed
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
Markets
• Mobile Handsets
• MP3 Players
• Digital Camera and Camcorders
• Notebook PCs & PDAs
• GPS
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
30 V
Forward Current (DC) I
F
500 mA
Forward Surge Current
(60 Hz @ 1 cycle)
I
FSM
10
A
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
I
FRM
4.0 A
ESD Rating: Human Body Model
Machine Model
ESD > 8
> 400
kV
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
30 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
http://onsemi.com
Device Package Shipping†
ORDERING INFORMATION
NSR05F30NXT5G DSN2
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DSN2
(0402)
CASE 152AC
MARKING
DIAGRAM
05F30 = Specific Device Code
YYY = Year Code
PIN 1
05F30
YYY
1
2
NSR05F30NXT5G
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
R
q
JA
P
D
240
521
°C/W
mW
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
R
q
JA
P
D
94
1.3
°C/W
W
Storage Temperature Range T
stg
−40 to +125 °C
Junction Temperature T
J
+150 °C
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Leakage
(V
R
= 10 V)
(V
R
= 30 V)
I
R
15
75
mA
Forward Voltage
(I
F
= 100 mA)
(I
F
= 500 mA)
V
F
0.320
0.400
0.360
0.430
V
NSR05F30NXT5G
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Forward Voltage Figure 2. Leakage Current
V
F
, FORWARD VOLTAGE (V) V
R
, REVERSE VOLTAGE (V)
0.500.400.300.100
0.01
0.1
1
0.001
20151050
I
F
, FORWARD CURRENT (A)
I
r
, REVERSE CURRENT (mA)
0.20
150°C
125°C
−25°C
75°C
25°C
150°C
125°C
−25°C
75°C
25°C
10000
0.01
0.1
1
10
100
0.001
1000
30
Figure 3. Total Capacitance
V
R
, REVERSE VOLTAGE (V)
3020151050
0
20
40
60
80
100
120
140
C
T
, TOTAL CAPACITANCE (pF)
T
A
= 25°C
160
100000
25
25
P1-P3P4-P4

NSR05F30NXT5G

Mfr. #:
Buy NSR05F30NXT5G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers Schottky Diodes 30V 500mA
Lifecycle:
New from this manufacturer.
Delivery:
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