Document Number: 91035
www.vishay.com
S11-1047-Rev. C, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRF634S, SiHF634S
Vishay Siliconix
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
Note
a. See device orientation
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 7.3 mH, R
g
= 25 , I
AS
= 8.1 A (see fig. 12).
c. I
SD
8.1 A, dI/dt 120 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
V
DS
(V) 250
R
DS(on)
()V
GS
= 10 V 0.45
Q
g
(Max.) (nC) 41
Q
gs
(nC) 6.5
Q
gd
(nC) 22
Configuration Single
K
D
2
PAK (TO-263)
S
D
G
ORDERING INFORMATION
Package D
2
PAK (TO-263) D
2
PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF634S-GE3 SiHF634STRR-GE3
a
Lead (Pb)-free
IRF634SPbF IRF634STRRPbF
a
SiHF634S-E3 SiHF634STR-E3
a
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
250
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
8.1
AT
C
= 100 °C 5.1
Pulsed Drain Current
a
I
DM
32
Linear Derating Factor 0.59
W/°C
Linear Derating Factor (PCB Mount)
e
0.025
Single Pulse Avalanche Energy
b
E
AS
300 mJ
Avalanche Current
a
I
AR
8.1 A
Repetitive Avalanche Energy
a
E
AR
7.4 mJ
Maximum Power Dissipation T
C
= 25 °C
P
D
74
W
Maximum Power Dissipation (PCB Mount)
e
T
A
= 25 °C 3.1
Peak Diode Recovery dV/dt
c
dV/dt 4.8 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
* Pb containing terminations are not RoHS compliant, exemptions may apply