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MMBTH10M3T5G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2009
January, 2009 − Rev. 0
1 Publication Order Number:
MMBTH10M3/D
MMBTH10M3T5G
NPN VHF/UHF Transistor
The MMBTH10M3T5G device is a spin−off of our popular
SOT−23 three−leaded device. It is designed for general purpose
VHF/UHF applications and is housed in the SOT−723 surface mount
package. This device is ideal for low−power surface mount
applications where board space is at a premium.
Features
• Reduces Board Space
• This is a Halide−Free Device
• This is a Pb−Free Device
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector −Emitter Voltage V
CEO
25 Vdc
Collector −Base Voltage V
CBO
30 Vdc
Emitter−Base Voltage V
EBO
3.0 Vdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR−5 Board (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
265
2.1
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
470 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
640
5.1
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
195 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
http://onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
MMBTH10M3T5G SOT−723
(Pb−Free)
8000/Tape & Reel
COLLECTOR
3
1
BASE
2
EMITTER
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOT−723
CASE 631AA
STYLE 1
1
2
3
AJ M
AJ = Specific Device Code
M = Date Code
MARKING
DIAGRAM
MMBTH10M3T5G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
25 − − Vdc
Collector−Base Breakdown Voltage
(I
C
= 100 μAdc, I
E
= 0)
V
(BR)CBO
30 − − Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 μAdc, I
C
= 0)
V
(BR)EBO
3.0 − − Vdc
Collector Cutoff Current
(V
CB
= 25 Vdc, I
E
= 0)
I
CBO
− − 100 nAdc
Emitter Cutoff Current
(V
EB
= 2.0 Vdc, I
C
= 0)
I
EBO
− − 100 nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 4.0 mAdc, V
CE
= 10 Vdc)
h
FE
60 − −
−
Collector−Emitter Saturation Voltage
(I
C
= 4.0 mAdc, I
B
= 0.4 mAdc)
V
CE(sat)
− − 0.5 Vdc
Base−Emitter On Voltage
(I
C
= 4.0 mAdc, V
CE
= 10 Vdc)
V
BE
− − 0.95 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 4.0 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
f
T
650 − −
MHz
Collector−Base Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
cb
− − 0.7 pF
Common−Base Feedback Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
rb
− − 0.65 pF
Collector Base Time Constant
(I
C
= 4.0 mAdc, V
CB
= 10 Vdc, f = 31.8 MHz)
rb′C
c
− − 9.0 ps
MMBTH10M3T5G
http://onsemi.com
3
TYPICAL CHARACTERISTICS
600
f, FREQUENCY (MHz)
Figure 1. Rectangular Form
g
ib
(mmhos)
Figure 2. Polar Form
f, FREQUENCY (MHz)
Figure 3. Rectangular Form
g
fb
(mmhos)
Figure 4. Polar Form
70 60 50 10 0 -10
0204060
0
80100
70
60
50
40
30
20
0
60
30
20
10
10 30 50 70
-10
10
200 300 400 500 700
1000
80
-20
-30
-40
-50
-60
40 30 20 -20 -30
50
40
100 200 300 400 500 700
1000
0
-10
-20
-30
30
20
10
40
70
60
50
b
fb
-g
fb
100
200
400
700
1000 MHz
1000 MHz
100
200
400
700
g
ib
-b
ib
jb (mmhos)
ib
jb (mmhos)
fb
, FORWARD TRANSFER ADMITTANCE (mmhos) , INPUT ADMITTANCE (mmhos)
ib
y
fb
, FORWARD TRANSFER ADMITTANCE
COMMON−BASE y PARAMETERS versus FREQUENCY
(V
CB
= 10 Vdc, I
C
= 4.0 mAdc, T
A
= 25°C)
y
ib
, INPUT ADMITTANCE
ib
yy
P1-P3P4-P5

MMBTH10M3T5G

Mfr. #:
Buy MMBTH10M3T5G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SOT723 VHF NPN TRANS
Lifecycle:
New from this manufacturer.
Delivery:
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