PMST3906_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 29 April 2009 2 of 10
NXP Semiconductors
PMST3906
40 V, 200 mA PNP switching transistor
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 3. Ordering information
Type number Package
Name Description Version
PMST3906 SC-70 plastic surface-mounted package; 3 leads SOT323
Table 4. Marking codes
Type number Marking code
[1]
PMST3906 *2A
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −40 V
V
CEO
collector-emitter voltage open base - −40 V
V
EBO
emitter-base voltage open collector - −6V
I
C
collector current - −200 mA
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- −200 mA
I
BM
peak base current single pulse;
t
p
≤ 1ms
- −100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 200 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction
to ambient
in free air
[1]
- - 625 K/W
