FMMT549 / FMMT549A
Document Number: DS33098 Rev. 4 - 2
2 of 5
www.diodes.com
September 2011
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Diodes Incorporated
FMMT549 / FMMT549A
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-35 V
Collector-Emitter Voltage
V
CEO
-30 V
Emitter-Base Voltage
V
EBO
-5 V
Continuous Collector Current
I
C
-1 A
Peak Pulse Current
I
CM
-2 A
Base Current
I
B
-200 mA
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
P
D
500 mW
Thermal Resistance, Junction to Ambient (Note 4)
R
θJA
250
°C/W
Thermal Resistance, Junction to Lead (Note 5)
R
θJL
197
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-35 - - V
I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 6)
BV
CEO
-30 - - V
I
C
= -10mA
Emitter-Base Breakdown Voltage
BV
EBO
-5 - - V
I
E
= -100µA
Collector Cutoff Current
I
CBO
- - -0.1
µA
V
CB
= -30V
- - -10
V
CB
= -30V, T
A
= 100°C
Emitter Cutoff Current
I
EBO
- - -0.1 µA
V
EB
= -4V
Static Forward Current Transfer Ratio (Note 6)
h
FE
70 200 -
-
I
C
= -50mA, V
CE
= -2V
80 130 -
I
C
= -1A, V
CE
= -2V
40 80 -
I
C
= -2A, V
CE
= -2V
FMMT549 100 160 300 -
I
C
= -500mA, V
CE
= -2V
FMMT549A 150 200 500 -
I
C
= -500mA, V
CE
= -2V
Collector-Emitter Saturation Voltage
V
CE(sat)
- -250 -500
mV
I
C
= - 1A, I
B
= -100mA
- -500 -750
I
C
= - 2A, I
B
= -200mA
FMMT549A - -
-300
mV
I
C
= -100mA, I
B
= -1mA
Base-Emitter Saturation Voltage (Note 6)
V
BE
sat
- -900 -1250 mV
I
C
= -1A, I
B
= -100mA
Base-Emitter Turn-On Voltage (Note 6)
V
BE
on
- -850 -1000 mV
I
C
= -1A, V
CE
= -2V
Output Capacitance
C
obo
- - 25 pF
V
CB
= -10V, f = 1MHz
Transition Frequency
f
T
100 - - MHz
V
CE
= -5V, I
C
= -100mA,
f = 100MHz
Switching Times
t
on
- 50 - ns
I
C
= -500mA, V
CC
= -10V
I
B1
= I
B2
= -50mA
t
off
- 300 - ns
Notes: 4. For a device surface mounted FR4 PCB with minimum recommended pad layout; high coverage of single sided 1 oz copper, in still air conditions; the
device is measured when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (at the end of the collector lead).
6.
Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%
