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PD85025TR-E
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
PD85025-E
Typical performance
Doc ID 13593 Rev
3
7/16
Figure 6.
DC output charact
eristics
Figure 7.
Gain vs output power and
Bias current
0
1
2
3
4
5
6
02
46
8
1
0
1
2
VD
S
[
V]
Vg
s
=
4
.
0
V
Vg
s
=
4
.
5
V
Vg
s
=
5
.
0
V
Vg
s
=
5
.
5
V
Vg
s
=
6
.
0
V
Ta
m
b
=
+
60 °C
ID[A]
10
11
12
13
14
15
16
17
18
19
20
0
5
10
15
20
25
30
35
Input power (W
)
Outp
u
t p
o
we
r (W)
Idq =
100mA
Idq =
200mA
Idq = 300mA
Fre
q =
870 MHz
Vdd
=
13.
6V
Gain (dB)
Output power (W)
Figure 8.
Ouptut po
wer and efficiency vs
Input power
Figure 9.
Output po
wer and drain current vs
Gate voltage
0
5
10
15
20
25
30
35
40
0.
0
0.
5
1.
0
1.
5
2.0
2.
5
Input
power (W
)
O
ut
put
pow
er
(
W)
0
10
20
30
40
50
60
70
80
Effi
ciency (%)
Pou
t
Ef
f
Fre
q =
870 MHz
Vd
d =
13.
6V
I
dq
=
300 mA
0
4
8
12
16
20
24
28
32
01
23
45
6
Vgs (
V)
Pout (
W)
0
0.
4
0.
8
1.
2
1.
6
2
2.
4
2.
8
3.
2
Id
(A
)
Pout
Id
Fr
e
q =
870 MH
z
Pi
n =
0.
4W
I
d
q =
300mA
Typical performance
PD85025-E
8/16
Doc ID 13593 Re
v 3
Figure 10.
P
out and drain current vs supply
vo
l
ta
g
e
Figure 11.
P
out and drain current vs suppl
y
vo
l
t
a
g
e
0
5
10
15
20
25
30
71
0
1
3
1
6
1
9
Vdd (V)
Pout
(W
)
0
0.
5
1
1.
5
2
2.
5
3
Id
(A
)
Pou
t
Id
Fr
e
q =
870 MH
z
I
dq =
300mA
Pi
n
=
0.
4W
0
5
10
15
20
25
30
35
40
71
0
1
3
1
6
1
9
Vdd (V)
Pout
(W
)
0
0.
5
1
1.
5
2
2.
5
3
3.
5
4
Id
(A
)
Pout
Id
Fr
e
q =
870 MH
z
I
dq =
300mA
Pi
n = 1W
PD85025-E
Package mechanical da
ta
Doc ID 13593 Rev
3
9/16
5
P
acka
ge mechanical data
In order to meet en
vironmental requirements
, ST off
ers these de
vices in different
grades of
ECOP
ACK® pac
kages, depending on their
lev
el of environment
al compliance. ECOP
A
CK®
specifications
, grade
definitions and product status ar
e av
ailable at: www
.st.com.
ECOP
ACK
is an ST tradema
rk.
\
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
PD85025TR-E
Mfr. #:
Buy PD85025TR-E
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors POWER R.F. N-Ch Trans
Lifecycle:
New from this manufacturer.
Delivery:
DHL
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Ups
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EMS
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