0 40 80 120 160
0
10
20
30
40
0,01 0,1 1
100
150
200
0,5 1,0 1,5 2,0
0
10
20
30
40
50
1 10 100 1000 10000
0,0
0,5
1,0
1,5
2,0
2,5
I
T
[A]
t [s]
V
T
[V]
2 3 4 5 6 7 8 9 011
10
100
I
2
t
[A
2
s]
t [ms]
I
TSM
[A]
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 125°C
T
VJ
= 45°C
V
R
= 0 V
I
T(AV)M
[A]
T
case
[°C]
Z
thJC
[K/W]
t [ms]
Fig. 1 Forward characteristics
Fig. 2 Surge overload current
I
TSM
: crest value, t: duration
Fig. 3 I
2
t versus time (1-10 s)
Fig. 4 Gate voltage & gate current
Triggering: A = no; B = possible; C = safe
Fig. 6 Max. forward current at
case temperature
Fig. 7 Transient thermal impedance junction to case
Fig. 5 Gate controlled delay time t
gd
0 10 20 30
0
10
20
30
40
I
T(AV)
[A]
P
(AV)
[W]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0 50 100 150
T
amb
[°C]
R
thHA
0.6
0.8
1.0
2.0
4.0
8.0
dc =
1
0.5
0.4
0.33
0.17
0.08
dc =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=
125°C
150°C
0 25 50 75
0
1
2
3
4
V
G
[V]
I
G
[mA]
I
GD
: T
VJ
= 125°C
I
GD
: T
VJ
= 25°C
I
GD
: T
VJ
= 25°C
I
GD
: T
VJ
= 0°C
I
GD
: T
VJ
= -40°C
A
B
B
B
C
10
-2
10
-1
10
0
10
1
10
-1
10
0
10
1
10
2
t
gd
[µs]
I
G
[A]
lim.
typ.
T
VJ
= 125°C
i R
thi
(K/W) t
i
(s)
1 0.1 0.01
2 0.06 0.0001
3 0.2 0.02
4 0.35 0.4
5 1.79 0.15
Thyristor
IXYS reserves the right to change limits, conditions and dimensions.
20150827dData according to IEC 60747and per semiconductor unless otherwise specified
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