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MBRS130LT3G

P1-P3P4-P5
Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 9
1 Publication Order Number:
MBRS130LT3/D
MBRS130LT3G,
SBRS8130LT3G
Schottky Power Rectifier
Surface Mount Power Package
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification,
or as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the
system.
Features
Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, T
J
= 25C)
Small Compact Surface Mountable Package with J−Bend Leads
Highly Stable Oxide Passivated Junction
Guard−Ring for Stress Protection
ESD Ratings:
Human Body Model = 3B (> 16000 V)
Machine Model = C (> 400 V)
AEC−Q101 Qualified and PPAP Capable
SBRS8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 100 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
Cathode Polarity Band
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SMB
CASE 403A
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
30 VOLTS
Device Package Shipping
†
ORDERING INFORMATION
MBRS130LT3G SMB
(Pb−Free)
2,500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MARKING DIAGRAM
1BL3 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
AYWW
1BL3G
G
(Note: Microdot may be in either location)
SBRS8130LT3G SMB
(Pb−Free)
2,500 /
Tape & Reel
MBRS130LT3G, SBRS8130LT3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30 V
Average Rectified Forward Current
T
L
= 120C
T
L
= 110C
I
F(AV)
1.0
2.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
40
A
Operating Junction Temperature T
J
−65 to +125 C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance,
Junction−to−Lead
Y
JL
12
C/W
Thermal Resistance,
Junction−to−Ambient (T
A
= 25C, Min Pad, 1 oz copper)
Junction−to−Ambient (T
A
= 25C, 1” Pad, 1 oz copper)
R
q
JA
228.8
71.3
C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 1.0 A, T
J
= 25C)
(i
F
= 2.0 A, T
J
= 25C)
V
F
0.395
0.445
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 25C)
(Rated dc Voltage, T
J
= 100C)
I
R
1.0
10
mA
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
V
F
, INSTANTANEOUS VOLTAGE (V)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
0.1
1
10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
I
F
, INSTANTANEOUS FORWARD CURRENT
(A)
T
J
= 100C
25C
0.1
1
10
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
I
F
, MAXIMUM INSTANTANEOUS FORWARD
CURRENT (A)
T
J
= 100C
25C
V
F
, MAXIMUM INSTANTANEOUS VOLTAGE (V)
MBRS130LT3G, SBRS8130LT3G
http://onsemi.com
3
100
10
1.0
0.1
0.01
0.001
0 3 6 9 12 15 18 21 24 27 30
V
R
, REVERSE VOLTAGE (V)
I
R
, IREVERSE CURRENT (mA)
T
J
= 100C
25C
0 3 6 9 12 15 18 21 24 27 30
V
R
, REVERSE VOLTAGE (V)
I
R
, IREVERSE CURRENT (mA)
T
J
= 100C
25C
Figure 3. Typical Reverse Leakage Current
Figure 4. Typical Maximum Reverse Leakage
Curent
100
10
1.0
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
100 105 110 115 120 125 130
T
C
, CASE TEMPERATURE (C)
Figure 5. Current Derating (Case)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
SQUARE WAVE
DC
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Figure 6. Typical Power Dissipation
P
F(AV)
, AVERAGE POWER DISSIPATION (W)
SQUARE
DC
C, CAPACITANCE (pF)
400
350
300
250
200
150
100
50
0
0 4 8 121620242832
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Typical Capacitance
NOTE: TYPICAL CAPACITANCE
AT 0 V = 290 pF
P1-P3P4-P5

MBRS130LT3G

Mfr. #:
Buy MBRS130LT3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 1A 30V Low Vf
Lifecycle:
New from this manufacturer.
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