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MMRF1306HSR5

P1-P3P4-P6P7-P9P10-P12P13-P14
4
RF Device Data
Freescale Semiconductor, Inc.
MMRF1306HR5 MMRF1306HSR5
Figure 2. MMRF1306HR5(HSR5) 230 MHz Production Test Circuit Component Layout — Pulse
-- --
----
CUT OUT AREA
C10 C11
C12
C13
R1
C1
C2
C3
C4
L1
C5
L2
R2
C9
C7
C8
C6
COAX2
COAX1
COAX4
COAX3
C14
C22 C23 C24
C21
L3
C15
C16
C17
C18
C19
C20
C26 C27 C28
L4
C25
Table 6. MMRF1306HR5(HSR5) 230 MHz Production Test Circuit Component Designations and Values — Pulse
Part Description Part Number Manufacturer
C1 20 pF Chip Capacitor ATC100B200JT500XT ATC
C2, C3, C5 27 pF Chip Capacitors ATC100B270JT500XT ATC
C4 0.8--8.0 pF Variable Capacitor, Gigatrim 27291SL Johanson
C6, C10 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet
C7, C11 0.1 F Chip Capacitors CDR33BX104AKYS AVX
C8, C12 220 nF Chip Capacitors C1812C224K5RACTU Kemet
C9, C13, C21, C25 1000 pF Chip Capacitors ATC100B102JT50XT ATC
C14 43 pF Chip Capacitor ATC100B430JT500XT ATC
C15 75 pF Metal Mica MIN02--002EC750J--F CDE
C16, C17, C18, C19 240 pF Chip Capacitors ATC100B241JT200XT ATC
C20 6.2 pF Chip Capacitor ATC100B6R2BT500XT ATC
C22, C23, C24, C26, C27, C28 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp
Coax1, 2, 3, 4 25 Semi Rigid Coax, 2.2 Shield Length UT--141C--25 Micro--Coax
L1, L2 5 nH Inductors A02TKLC Coilcraft
L3, L4 6.6 nH Inductors GA3093--ALC Coilcraft
R1, R2 10 Chip Resistors CRCW120610R0JNEA Vishay
PCB 0.030,
r
=2.55 AD255A Arlon
MMRF1306HR5 MMRF1306HSR5
5
RF Device Data
Freescale Semiconductor, Inc.
+
+
+
+
+
+
+
RF
INPUT
Z1 Z2
Z3
C3
Z4
C1
COAX1
COAX2
Z5
C2
Z6
Z7
Z8
Z9
Z10
C4 C5
V
BIAS
L1
L2
V
BIAS
C10 C11 C12 C13
C6 C7 C8 C9
R1
R2
Z11
Z13
Z14
DUT
Z12
Z15
Z16
L3
Z19
Z17
Z21
Z22
Z18
Z20
Z23 Z25
Z24 Z26
C14 C15
L4
C21 C22 C23 C24
C25 C26 C27 C28
Z27
Z28
C16
C17
C18
C19
COAX4
COAX3
Z29 Z30
C20
RF
OUTPUT
V
SUPPLY
V
SUPPLY
Table 7. MMRF1306HR5(HSR5) 230 MHz Production Test Circuit Microstrips — Pulse
DescriptionMicrostripDescriptionMicrostripDescriptionMicrostrip
Z1 0.1920.082 Microstrip
Z2 0.1750.082 Microstrip
Z3, Z4 0.1700.100 Microstrip
Z5, Z6 0.1160.285 Microstrip
Z7, Z8 0.1160.285 Microstrip
Z9, Z10 0.1080.285 Microstrip
Figure 3. MMRF1306HR5(HSR5) 230 MHz Production Test Circuit Schematic — Pulse
Z11*, Z12* 0.8720.058 Microstrip
Z13, Z14 0.4120.726 Microstrip
Z15, Z16 0.3710.507 Microstrip
Z17*, Z18* 0.4660.363 Microstrip
Z19*, Z20* 0.1870.154 Microstrip
Z21, Z22 0.1040.507 Microstrip
Z23, Z24 1.2510.300 Microstrip
Z25, Z26 0.1270.300 Microstrip
Z27, Z28 0.1160.300 Microstrip
Z29 0.186 0.082 Microstrip
Z30 0.179 0.082 Microstrip
* Line length includes microstrip bends
6
RF Device Data
Freescale Semiconductor, Inc.
MMRF1306HR5 MMRF1306HSR5
TYPICAL CHARACTERISTICS
50
10
2000
02010
V
DS
, DRAIN--SOURCE VOL TAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
30
C
iss
1000
100
40
C
oss
Measured with 30 mV(rms)ac @ 1 MHz
V
GS
=0Vdc
Note: Each side of device measured separately.
1
59
66
35
P
in
, INPUT POWER (dBm) PEAK
Figure 5. Output Power versus Input Power
64
36 37 38 39 40 41 42
P
out
, OUTPUT POWER (dBm) PULSED
63
60
Actual
Ideal
V
DD
=50Vdc,I
DQ
= 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
P1dB = 61.3 dBm
(1333 W)
62
61
65
P3dB = 61.9 dBm (1553 W)
P2dB = 61.7 dBm (1472 W)
26
30
90
100
24
70
50
P
out
, OUTPUT POWER (WATTS) PEAK
Figure 6. Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
D,
DRAIN EFFICIENCY (%)
22
20
2000
21
40
60
80
23
25
16
23
0
20
19
P
out
, OUTPUT POWER (WATTS) PEAK
Figure 7. Power Gain versus Output Power
G
ps
, POWER GAIN (dB)
200
18
1400 1600
17
400 800 1000 1200
V
DD
=30V
50 V
21
22
25
24
26
600
35 V
40 V
45 V
20
90
0
P
out
, OUTPUT POWER (WATTS) PEAK
Figure 8. Drain Efficiency versus Output Power
70
200 400 600 800 1000 1200 1400
60
30
50
40
80
1600
Figure 9. Power Gain and Drain Efficiency versus
Output Power
P
out
, OUTPUT POWER (WATTS) PEAK
G
ps
, POWER GAIN (dB)
19
21
20
100 2000
D
25_C
T
C
=--30_C
85_C
G
ps
40
60
50
20
30
D
, DRAIN EFFICIENCY (%)
-- 3 0 _C
25_C
85_C
V
DD
=30V
50 V
35 V
40 V
45 V
D,
DRAIN EFFICIENCY (%)
24
23
22
26
25
70
80
90
C
rss
1000
D
G
ps
V
DD
=50Vdc,I
DQ
= 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
20001000
I
DQ
= 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
I
DQ
= 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
V
DD
=50Vdc,I
DQ
= 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
P1-P3P4-P6P7-P9P10-P12P13-P14

MMRF1306HSR5

Mfr. #:
Buy MMRF1306HSR5
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors MOSFET 10-500 MHz 1000 W 50 V
Lifecycle:
New from this manufacturer.
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