FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified PowerTrench
®
BGA MOSFET
www.fairchildsemi.com
2
©2007 Fairchild Semiconductor Corporation
FDZ2554P Rev B
Electrical Characteristics T
J
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage I
D
= -250µA, V
GS
= 0V -20 V
∆BV
DSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= -250µA, referenced to 25°C -13 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= -16V, V
GS
= 0V -1 µA
I
GSS
Gate to Source Leakage Current V
GS
= ±12V, V
DS
= 0V ±100 nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= -250µA -0.6 -0.8 -1.5 V
∆V
GS(th)
∆T
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= -250µA, referenced to 25°C 3 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= -4.5V, I
D
= -6.5A 21 28
mΩ
V
GS
= -2.5V, I
D
= -5A 36 45
V
GS
= -4.5V, I
D
= -6.5A,
T
J
= 125°C
30 43
g
FS
Forward Transconductance V
DD
= -5V, I
D
= -6.5A 24 S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= -10V, V
GS
= 0V,
f = 1MHz
1430 1900 pF
C
oss
Output Capacitance 319 425 pF
C
rss
Reverse Transfer Capacitance 164 245 pF
R
g
Gate Resistance V
GS
= 15mV, f = 1MHz 9.2 Ω
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= -10V, I
D
=-1A,
V
GS
= -4.5V, R
GEN
= 6Ω
12 22 ns
t
r
Rise Time 9 18 ns
t
d(off)
Turn-Off Delay Time 62 100 ns
t
f
Fall Time 37 60 ns
Q
g
Total Gate Charge
V
GS
= -4.5V , V
DD
=-10V
I
D
= -6.5A
14 20 nC
Q
gs
Gate to Source Charge 3 nC
Q
gd
Gate to Drain “Miller” Charge 4 nC
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain-Source Diode Forward Current -1.75 A
V
SD
Source to Drain Diode Forward Voltage V
GS
= 0V, I
S
= -1.75A (Note 2) -0.7 -1.2 V
t
rr
Reverse Recovery Time
I
F
= -6.5A, di/dt = 100A/µs
25 40 ns
Q
rr
Reverse Recovery Charge 20 32 nC
NOTES:
1. R
θJA
is determined with the device mounted on a 1 in
2
oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board
side of the solder ball, R
θJB
, is defined for reference. For R
θJC
, the thermal reference point for the case is defined as the top surface of the copper chip carrier. R
θJC
and R
θJB
are guaranteed by design while R
θJA
is determined by the user's board design.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
a. 60°C/W when mounted on
a 1 in
2
pad of 2 oz copper.
b. 108 °C/W when mounted on a
minimum pad of 2 oz copper.
