Product Standards
Transistors with Built-in Resistor
DRA9123E0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1.
Page
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Input resistance R1
Resistance ratio R1/R2
Collector-emitter saturation voltage VCE(sat)
Forward current transfer ratio
Input voltage
Vi(on)
Vi(off)
hFE
Collector-emitter voltage (Base open) VCEO
ICEO
VEB = -6 V, IC = 0
Collector-base cutoff current (Emitter open)
ICBO
Emitter-base cutoff current (Collector open)
IEBO
Collector-emitter cutoff current (Base open)
VCE = -50 V, IB = 0
Tstg -55 to
Collector-base voltage (Emitter open) VCBO
Junction temperature Tj 150 °C
Total power dissipation PT 125 mW
Collector current IC -100 mA
Collector-emitter voltage (Base open) VCEO -50 V
Collector-base voltage (Emitter open) VCBO -50 V
Internal Connection
Resistance
value
R1
2.2
k
R2 2.2
k
1of3
Unit: mm
Min Typ
SC-89
Collector
Halogen-free / RoHS compliant
Low collector-emitter saturation voltage Vce(sat)
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
DRA9123E0L
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC9123E
DRA5123E in SSMini3 type package
Features
Marking Symbol:
L2
Code
Base
Emitter
SOT-490
Panasonic
Packaging
SSMini3-F3-B
JEITA
Parameter Symbol Rating Unit
1.
2.
3.
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Max
IC = -10 μA, IE = 0
Operating ambient temperature Topr -40 to
Parameter Symbol Conditions
Storage temperature
+85 °C
+150 °C
Unit
V
V
-0.1 μA
-50
μA
IC = -2 mA, IB = 0 -50
VCB = -50 V, IE = 0
-0.5
-2.0 mA
-
V
VCE = -10 V, IC = -5 mA 6 20
V
IC = -10 mA, IB = -0.5 mA
VCE = -0.2 V, IC = -5 mA 1.8
-0.3
V
-30% 2.2 +30%
k
VCE = -5 V, IC = -100 μA -0.8
0.8 1.0 1.2 -
C
B
R
1
R
2
E
1.6
1.6
0.7
0.85
0.130.26
(0.5)
1.0
12
3
(0.5)
