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M6060P-E3/45

P1-P3P4-P5
M6035P, M6045P, M6060P
www.vishay.com
Vishay General Semiconductor
Revision: 17-Aug-15
1
Document Number: 88980
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Schottky Rectifier
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max.10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 30 A
V
RRM
35 V, 45 V, 60 V
I
FSM
350 A
V
F
at I
F
= 30 A
0.50 V, 0.56 V
T
J
max. 150 °C
Package TO-247AD
Diode variations Common cathode
TO-247AD (TO-3P)
1
2
3
PIN 1
PIN 3
CASE
PIN 2
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL M6035P M6045P M6060P UNIT
Maximum repetitive peak reverse voltage V
RRM
35 45 60 V
Maximum average forward rectified current at (fig.1)
total device
I
F(AV)
60
A
per diode 30
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
I
FSM
350 A
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz per diode I
RRM
2.0 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-65 to +150 °C
M6035P, M6045P, M6060P
www.vishay.com
Vishay General Semiconductor
Revision: 17-Aug-15
2
Document Number: 88980
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS
M6035P M6045P M6060P UNIT
TYP. MAX. TYP. MAX.
Instantaneous forward voltage per diode V
F
(1)
I
F
= 10 A
T
J
= 25 °C
0.42 - 0.43 -
V
I
F
= 20 A 0.49 - 0.52 -
I
F
= 30 A 0.54 0.60 0.59 0.64
I
F
= 10 A
T
J
= 125 °C
0.31 - 0.33 -
I
F
= 20 A 0.42 - 0.47 -
I
F
= 30 A 0.50 0.55 0.56 0.60
Reverse current per diode I
R
(2)
V
R
T
J
= 25 °C 135 600 240 600 μA
T
J
= 125 °C 110 160 140 160 mA
Typical junction capacitance C
J
4.0 V, 1 MHz 1150 - 1090 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL M6035P M6045P M6060P UNIT
Typical thermal resistance per diode R
JC
2.0 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
M6045P-E3/45 6.14 45 30/tube Tube
M6060P-E3/45 6.14 45 30/tube Tube
0
10
20
30
40
50
60
70
0 25 50 75 100 125 150 175
Average Forward Current (A)
Case Temperature (°C)
Resistive or Inductive Load
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
Average Forward Current (A)
Average Power Loss (W)
M6035P & M6045P
D = t
p
/T t
p
T
M6035P, M6045P, M6060P
www.vishay.com
Vishay General Semiconductor
Revision: 17-Aug-15
3
Document Number: 88980
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Forward Power Loss Characteristics Per Diode
Fig. 4 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 7 - Typical Reverse Characteristics Per Diode
Fig. 8 - Typical Reverse Characteristics Per Diode
D = t
p
/T t
p
T
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
M6060P
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
400
300
200
100
1 10 100
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
M6035P, M6045P
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
M6060P
0.01
0.1
1
10
100
1000
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
M6035P, M6045P
0.01
0.1
1
10
100
1000
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
M6060P
P1-P3P4-P5

M6060P-E3/45

Mfr. #:
Buy M6060P-E3/45
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 60 Amp 60 Volt Dual Common Cath
Lifecycle:
New from this manufacturer.
Delivery:
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