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TLP351(F)

P1-P3P4-P6P7-P9
TLP351
2014-09-22
1
TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
TLP351
Inverter for Air Conditioner
IGBT/Power MOS FET Gate Drive
Industrial Inverter
The TOSHIBA TLP351 consists of a GaAℓAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP351 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP351 is capable of “direct” gate drive of lower Power IGBTs.
• Peak output current: ±0.6 A (max)
• Guaranteed performance over temperature: −40 to 100°C
• Supply current: 2 mA (max)
• Power supply voltage: 10 to 30 V
• Threshold input current : I
F
= 5 mA (max)
• Switching time (t
pLH
/t
pHL
) : 700 ns (max)
• Common mode transient immunity: 10 kV/μs
• Isolation voltage: 3750 Vrms
• Option(D4)
VDE Approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage :
890 V
PK
Highest Permissible Over Voltage
: 4000 V
PK
(Note): When a EN60747-5-2 approved type is needed,
Please designate “Option(D4)”
Truth Table Pin Configuration (top view)
Input LED
Tr1 Tr2 Output
H ON ON OFF H
L OFF OFF ON L
Schematic
Unit: mm
TOSHIBA 11-10C4
Weight: 0.54 g (typ.)
8
1: NC
2: Anode
3: Cathode
4: NC
5: GND
6: V
O
(output)
7: NC
8: V
CC
7
6
5
1
2
3
4
A
0.1 μF bypass capacitor must be connected
between pin 8 and 5.
2+
3−
V
CC
V
O
GND
(Tr1)
(Tr2)
I
CC
I
O
I
F
V
F
5
6
8
Start of commercial production
2002/05
TLP351
2014-09-22
2
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
LED
Forward current I
F
20 mA
Forward current derating (Ta ≥ 85°C) ΔI
F
/ΔTa −0.54 mA/°C
Peak transient forward current (Note 1) I
FP
1 A
Reverse voltage V
R
5 V
Junction temperature T
j
125 °C
Detector
“H” peak output current (Note 2) I
OPH
−0.6 A
“L” peak output current (Note 2) I
OPL
0.6 A
Output voltage V
O
35 V
Supply voltage V
CC
35 V
Junction temperature T
j
125 °C
Operating frequency (Note 3) f 25 kHz
Storage temperature range T
stg
−55 to 125 °C
Operating temperature range T
opr
−40 to 100 °C
Lead soldering temperature (10 s) (Note 4) T
sol
260 °C
Isolation voltage (AC, 1 minute, R.H. ≤ 60%) (Note 5) BV
S
3750 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width P
W
≤ 1 μs, 300 pps
Note 2: Exponential waveform pulse width P
W
≤ 10 μs, f ≤ 15 kHz
Note 3: Exponential waveform I
OPH
≤ −0.4 A (≤ 2.0 μs), I
OPL
≤ +0.4 A (≤ 2.0 μs), Ta = 100°C
Note 4: It is 2 mm or more from a lead root.
Note 5: Device considered a two terminal device: pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted
together.
Note 6: A ceramic capacitor (0.1 μF) should be connected from pin 8 to pin 5 to stabilize the operation of the high
gain linear amplifier. Failure to provide the bypassing may impair the switching property.
The total lead length between capacitor and coupler should not exceed 1 cm.
Recommended Operating Conditions
Characteristics Symbol Min Typ. Max Unit
Input current, ON (Note 7) I
F (ON)
7.5 ⎯ 10 mA
Input voltage, OFF V
F (OFF)
0 ⎯ 0.8 V
Supply voltage V
CC
10 ⎯ 30 V
Peak output current I
OPH
/I
OPL
⎯ ⎯ ±0.2 A
Operating temperature T
opr
−40 ⎯ 100 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Note 7: Input signal rise time (fall time) < 0.5 μs
TLP351
2014-09-22
3
Electrical Characteristics
(Ta
=
−
40 to 100°C, unless otherwise specified)
Characteristics Symbol
Test
Circuit
Test Condition Min Typ.* Max Unit
Forward voltage V
F
⎯ I
F
= 5 mA, Ta = 25°C ⎯ 1.55 1.70 V
Temperature coefficient of forward
voltage
∆V
F
/∆Ta ⎯ I
F
= 5 mA ⎯ −2.0 ⎯ mV/°C
Input reverse current I
R
⎯ V
R
= 5 V, Ta = 25°C ⎯ ⎯ 10 μA
Input capacitance C
T
⎯ V = 0 , f = 1 MHz,Ta = 25°C ⎯ 45 ⎯ pF
Output current
(Note 8)
“H” Level
I
OPH1
1
V
CC
= 15 V
I
F
= 5 mA
V
8-6
= 4 V ⎯ −0.4 −0.2
A
I
OPH2
V
8-6
= 10 V ⎯ −0.67 −0.4
“L” Level
I
OPL1
2
V
CC
= 15 V
I
F
= 0 mA
V
6-5
= 2 V 0.2 0.35 ⎯
I
OPL2
V
6-5
= 10 V 0.4 0.63 ⎯
Output voltage
“H” Level V
OH
3
V
CC
= 10 V
I
O
= −100 mA,
I
F
= 5 mA
6.0 8.5 ⎯
V
“L” Level V
OL
4
I
O
= 100 mA,
V
F
= 0.8 V
⎯ 0.4 1.0
Supply current
“H” Level I
CCH
5
V
CC
= 10 to 30 V
V
O
open
I
F
= 10 mA ⎯ 1.4 2.0
mA
“L” Level I
CCL
6 I
F
= 0 mA ⎯ 1.3 2.0
Threshold input current L → H I
FLH
⎯ V
CC
= 15 V, V
O
> 1 V ⎯ 2.5 5 mA
Threshold input voltage H → L V
FHL
⎯ V
CC
= 15 V, V
O
< 1 V 0.8 ⎯ ⎯ V
Supply voltage V
CC
⎯ ⎯ 10 ⎯ 30 V
*: All typical values are at Ta = 25°C
Note 8: Duration of I
O
time ≤ 50 μs
Note 9: This product is more sensitive than the conventional product to static electricity (ESD) because of a lowest
power consumption design.
General precaution to static electricity (ESD) is necessary for handling this component.
Isolation Characteristics
(Ta = 25°C)
Characteristic Symbol Test Conditions Min Typ. Max Unit
Capacitance input to output C
S
V
S
= 0, f = 1MHz (Note5) ⎯ 1.0 ⎯ pF
Isolation resistance R
S
V
S
= 500 V, R.H. ≤ 60% (Note5) 1×10
12
10
14
― Ω
Isolation voltage BV
S
AC,1 minute 3750 ― ―
V
rms
AC,1 second, in oil ― 10000 ―
DC,1 minute, in oil ― 10000 ― Vdc
P1-P3P4-P6P7-P9

TLP351(F)

Mfr. #:
Buy TLP351(F)
Manufacturer:
Toshiba
Description:
Logic Output Optocouplers 3750Vrms 0.2 Low power
Lifecycle:
New from this manufacturer.
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