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DMG4800LSD-13

P1-P3P4-P6
DMG4800LSD
Document number: DS31858 Rev. 7 - 2
1 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMG4800LSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
max
I
D
max
T
A
= +25°C
30V
16m @ V
GS
= 10V
9.8A
22m @ V
GS
= 4.5V
8.4A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
Features and Benefits
100% avalanche rated part
Low R
DS(on)
- minimizes conduction losses
Low Q
g
- minimizes switching losses
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.076 grams (approximate)
Ordering Information (Notes 4 & 5)
Part Number Compliance Case Packaging
DMG4800LSD-13 Standard SO-8 2,500 / Tape & Reel
DMG4800LSDQ-13 Automotive SO-8 2,500 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q10x and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View Pin Configuration
Internal Schematic
D
2
S
2
G
2
D
1
S
1
G
1
N-Channel MOSFET N-Channel MOSFET
SO-8
Top View
e3
1
4
8
5
G
4
800
LD
Y
Y W
W
1
4
8
5
G4800LD
Y
Y W
W
= Manufacturer’s Marking
G4800LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Chengdu A/T Site
Shanghai A/T Site
DMG4800LSD
Document number: DS31858 Rev. 7 - 2
2 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMG4800LSD
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±25 V
Continuous Drain Current (Note 7) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
7.5
6.0
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
9.8
7.7
A
Continuous Drain Current (Note 7) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
6.4
5.0
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
8.4
6.6
A
Maximum Continuous Body Diode Forward Current (Note 7)
I
S
2 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
42 A
Avalanche Current (Notes 8 & 9) L = 0.1mH
I
AR
17 A
Repetitive Avalanche Energy (Notes 8 & 9) L = 0.1mH
E
AR
14 mJ
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
P
D
1.17 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
JA
107
°C/W
t<10s 61
Total Power Dissipation (Note 7)
P
D
1.5 W
Thermal Resistance, Junction to Ambient (Note 7)
Steady State
R
JA
83
°C/W
t<10s 49
Thermal Resistance, Junction to Case
R
JC
14.5
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
BV
DSS
30
— —
V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— —
1.0 A
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
V
GS
(
th
)
0.8 — 1.6 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS(on)
—
12
16
16
22
m
V
GS
= 10V, I
D
= 9A
V
GS
= 4.5V, I
D
= 7A
Forward Transfer Admittance
|Y
fs
|
—
8 — S
V
DS
= 10V, I
D
= 9A
Diode Forward Voltage
V
SD
—
0.72 0.94 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
C
iss
—
798
—
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
128
—
pF
Reverse Transfer Capacitance
C
rss
—
122
—
pF
Gate Resistance
R
g
—
1.37
—
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
—
8.56
—
nC
V
GS
= 5V, V
DS
= 15V,
I
D
= 9A
Gate-Source Charge
Q
s
—
1.8
—
nC
Gate-Drain Charge
Q
g
d
—
2.5
—
nC
Turn-On Delay Time
t
D
(
on
)
—
5.03
—
ns
V
DD
= 15V, V
GEN
= 10V,
R
L
= 15, R
G
= 6, I
D
= 1A
Turn-On Rise Time
t
r
—
4.50
—
ns
Turn-Off Delay Time
t
D
(
off
)
—
26.33
—
ns
Turn-Off Fall Time
t
f
—
8.55
—
ns
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C.
9. Applicable to products manufactured with Data Code “1146” (Nov, 2011) and newer.
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to product testing.
DMG4800LSD
Document number: DS31858 Rev. 7 - 2
3 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMG4800LSD
0 0.5 1 1.5 2
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
0
5
10
15
20
30
I,
D
R
AI
N
C
U
R
R
E
N
T
(A)
D
25
V = 2.0V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 10V
GS
V = 2.5V
GS
0 0.5 1 1.5 2 2.5 3 3.5 4
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A)
D
0
5
10
15
20
25
30
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
DS
0.01
0.1
1
0 5 10 15 20 25 30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 4.5V
GS
V = 2.5V
GS
0
0.01
0.02
0.03
0.04
0.05
0.06
R
,
D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.6
0.8
1.0
1.2
1.4
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DSON
1.6
V = 4.5V
I = 10A
GS
D
V = 10V
I = 11.6A
GS
D
0
0.01
0.02
0.03
0.04
0.05
R
,
D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DSON
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V = 10V
I = 11.6A
GS
D
V = 4.5V
I = 10A
GS
D
P1-P3P4-P6

DMG4800LSD-13

Mfr. #:
Buy DMG4800LSD-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET Dual N-Ch 30V VDSS 25 Vgss 42A IDM
Lifecycle:
New from this manufacturer.
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