RP1E075RPTR

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©2010 ROHM Co., Ltd. All rights reserved.
4V Drive Pch MOSFET
RP1E075RP
Structure Dimensions (Unit : mm)
Silicon P-channel MOSFET
Features
1) Low On-resistance.
2) High power package.
3) 4V drive.
Application
Switching
Inner circuit
Packaging specifications
Package
Code
Basic ordering unit (pieces)
RP1E075RP
Absolute maximum ratings (Ta = 25C)
Unit
Drain-source voltage V
Gate-source voltage V
Continuous A
Pulsed A
Continuous A
Pulsed A
Power dissipation W
Channel temperature C
Range of storage temperature C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Thermal resistance
Unit
Channel to Ambient C / W
*Mounted on a ceramic board.
Parameter
Type
Parameter
Source current
(Body Diode)
Drain current
1000
TR
Taping
Tstg
Tch
P
D
I
SP
7.5
20
I
S
I
DP
I
D
V
GSS
2.0
30
1.6
30
30
Limits
Rth (ch-a) 62.5
LimitsSymbol
V
DSS
Symbol
55 to +150
150
*2
*1
*1
*
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
1 ESD PROTECTION DIODE
2 BODY DIODE
2
1
(5) (4)
(2)
(
1) (
3)
(6)
MPT6
(Single)
(1) (2) (3)
(6) (5) (4)
1/5
2010.08 - Rev.A
Data Sheet
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
RP1E075RP
 
Electrical characteristics (Ta = 25C)
Symbol Min. Typ. Max. Unit
Gate-source leakage I
GSS
--10 AV
GS
=20V, V
DS
=0V
Drain-source breakdown voltage V
(BR)DSS
30 - - V I
D
=1mA, V
GS
=0V
Zero gate voltage drain current I
DSS
--1 AV
DS
=30V, V
GS
=0V
Gate threshold voltage V
GS (th)
1.0 - 2.5 V V
DS
=10V, I
D
=1mA
-1521 I
D
=7.5A, V
GS
=10V
-2231 I
D
=4A, V
GS
=4.5V
-2535 I
D
=4A, V
GS
=4.0V
Forward transfer admittance l Y
fs
l9 - - SI
D
=7.5A, V
DS
=10V
Input capacitance C
iss
- 1900 - pF V
DS
=10V
Output capacitance C
oss
- 250 - pF V
GS
=0V
Reverse transfer capacitance C
rss
- 250 - pF f=1MHz
Turn-on delay time t
d(on)
- 14 - ns I
D
=4A, V
DD
15V
Rise time t
r
- 25 - ns V
GS
=10V
Turn-off delay time t
d(off)
- 100 - ns R
L
=3.8
Fall time t
f
- 70 - ns R
G
=10
Total gate charge Q
g
- 21 - nC I
D
=7.5A, V
DD
15
Gate-source charge Q
gs
-5-nCV
GS
=5V R
L
=2.0
Gate-drain charge Q
gd
-7-nCR
G
=10
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Symbol Min. Typ. Max. Unit
Forward Voltage V
SD
--1.2 V I
s
=7.5A, V
GS
=0V
*Pulsed
Conditions
Conditions
m
Parameter
Parameter
Static drain-source on-state
resistance
R
DS (on)
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
2/5
2010.08- Rev.A
Data Sheet
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
RP1E075RP
 
Electrical characteristic curves
0
1
2
3
4
5
6
7
0 0.2 0.4 0.6 0.8 1
Ta=25°C
Pulsed
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -4.0V
V
GS
= -2.5V
V
GS
= -3.5V
V
GS
= -3.0V
V
GS
= -2.8V
0.001
0.01
0.1
1
10
0123
V
DS
= -10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
1
10
100
1000
0.1 1 10
V
GS
= -4.0V
V
GS
= -4.5V
V
GS
= -10V
Ta=25°C
Pulsed
0.01
0.1
1
10
0 0.5 1 1.5
V
GS
=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0
1
2
3
4
5
6
7
0246810
Ta=25°C
Pulsed
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -4.0V
V
GS
= -2.5V
V
GS
= -3.5V
V
GS
= -3.0V
V
GS
= -2.8V
1
10
100
1000
0.1 1 10
V
GS
= -4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
10
100
1000
0.1 1 10
V
GS
= -10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.1
1
10
100
0.01 0.1 1 10 100
V
DS
= -10V
Pulsed
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
1
10
100
1000
0.1 1 10
V
GS
= -4.0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Fig.1 Typical Output Characteristics( ) Fig.2 Typical Output Characteristics( ) Fig.3 Typical Transfer Characteristics
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current()
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current()
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current()
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current()
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
Fig.8 Forward Transfer Admittance
vs. Drain Current
DRAIN CURRENT : -I
D
[A]
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
DRAIN CURRENT : -I
D
[A]
DRAIN CURRENT : -I
D
[A]
GATE-SOURCE VOLTAGE : -V
GS
[V]
DRAIN-CURRENT : -I
D
[A]
STATIC
DRAIN
-
SOURCE
ON
-
STATE
RESISTANCE : R
DS
(on)[m]
DRAIN-CURRENT : -I
D
[A]
STATIC
DRAIN
-
SOURCE
ON
-
STATE
RESISTANCE : R
DS
(on)[m]
DRAIN-CURRENT : -I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[m]
DRAIN-CURRENT : -I
D
[A]
STATIC
DRAIN
-
SOURCE
ON
-
STATE
RESISTANCE : R
DS
(on)[m]
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
DRAIN-CURRENT : -I
D
[A]
SOURCE
CURRENT
: -
I
s
[A]
SOURCE-DRAIN VOLTAGE : -V
SD
[V]
3/5
2010.08- Rev.A

RP1E075RPTR

Mfr. #:
Manufacturer:
Description:
MOSFET P-CH 30V 7.5A MPT6
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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