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TSC5804DCP ROG

P1-P3P4-P6
TSC5804D
Taiwan Semiconductor
1 Version: C1703
High Voltage Fast-Switching NPN Power Transistor
FEATURES
● High Voltage Capability
● Fast Switching Speed
● Pb-free plating
● RoHS compliant
● Halogen-free mold compound
APPLICATION
● Electronic Ballast
● Switch mode power supply
KEY PERFORMANCE PARAMETERS
P
ARAMET
ER
VALUE
UNIT
BV
CEO
450 V
BV
CBO
1050 V
I
C
5 A
V
CE(SAT)
I
C
=1A, I
B
=0.2A 0.5 V
TO
251
(IPAK)
TO
252
(DPAK)
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Collector-Base Voltage
V
CBO
1050
V
Collector-Emitter Voltage @ V
BE
=0V
V
CES
450
V
Emitter-Base Voltage
V
EBO
15
V
Collector Current
I
C
5
A
Collector Peak Current (tp <5ms) I
CM
8
A
Base Current I
B
2
A
Base Peak Current (tp <5ms) I
BM
4
A
Power Total Dissipation @ T
C
=25ºC P
DTOT
45 W
Maximum Operating Junction Temperature T
J
+150
o
C
Storage Temperature Range T
STG
-55 to +150
o
C
THERMAL PERFORMANCE
PARAMETER SYMBOL LIMIT UNIT
Junction to Case Thermal Resistance R
ӨJC
2.78
o
C/W
Junction to Ambient Thermal Resistance R
ӨJA
100
o
C/W
TSC5804D
Taiwan Semiconductor
2 Version: C1703
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL MIN TYP
MAX
UNIT
Collector-Base Voltage I
C
=0.5mA BV
CBO
1050
-- -- V
Collector-Emitter Breakdown Voltage I
C
=5mA BV
CEO
450 -- -- V
Emitter-Base Breakdown Voltage I
E
=1mA BV
EBO
15 -- -- V
Collector Cutoff Current V
CE
=400V, I
B
=0 I
CEO
-- 10 250 µA
Collector Cutoff Current V
CB
=950V, I
E
=0 I
CBO
-- -- 10 µA
Collector-Emitter Saturation Voltage
I
C
=1A, I
B
=0.2A
V
CE(SAT)
1 --- -- 0.5 V
Collector-Emitter Saturation Voltage
I
C
=3.5A, I
B
=1A
V
CE(SAT)
2 --- 1.5 2.0 V
Base-Emitter Saturation Voltage
I
C
=3.5A, I
B
=1A
V
BE(SAT)
1 -- 1.1 1.5 V
DC Current Gain
V
CE
=5V, I
C
=0.1A
h
FE
1 50 70 100
V
CE
=3V, I
C
=0.8A h
FE
2 25 30 50
Diode Forward Voltage I
C
=2A V
F
-- -- 1.5 V
Rise Time
(Note 2)
V
CC
=5V, I
C
=0.5A
t
r
-- -- 1 µs
Storage Time
(Note 2)
t
STG
4.5 5 5.5 µs
Fall Time
(Note 2)
t
f
-- -- 1.2 µs
Repetitive Avalanche Energy L=2mH E
AR
6 -- -- mJ
Notes:
1. Pulse test: ≤380µs, duty cycle ≤ 2%
2. For DESIGN AID ONLY, not subject to production testing.
TSC5804D
Taiwan Semiconductor
3 Version: C1703
ORDERING INFORMATION
PART NO.
PACKAGE
PACKING
TSC5804DCH C5G TO-251 75pcs / Tube
TSC5804DCP ROG TO-252 2,500pcs / 13” Reel
Note:
1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
2. Halogen-free according to IEC 61249-2-21 definition
P1-P3P4-P6

TSC5804DCP ROG

Mfr. #:
Buy TSC5804DCP ROG
Manufacturer:
Taiwan Semiconductor
Description:
Bipolar Transistors - BJT High voltage fast Switching NPN Transistor with diode
Lifecycle:
New from this manufacturer.
Delivery:
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