NLU2GU04MUTCG

© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 5
1 Publication Order Number:
NLU2GU04/D
NLU2GU04
Dual Unbuffered Inverter
The NLU2GU04 MiniGatet is an advanced high−speed CMOS
dual unbuffered inverter in ultra−small footprint.
This device is well suited for use in oscillator, pulse−shaping and
high input impedance amplifier applications. For digital applications,
the NLU2G04 is recommended.
The NLU2GU04 input and output structures provide protection
when voltages up to 7 V are applied, regardless of the supply voltage.
Features
High Speed: t
PD
= 2.5 ns (Typ) @ V
CC
= 5.0 V
Low Power Dissipation: I
CC
= 1 mA (Max) at T
A
= 25°C
Power Down Protection Provided on inputs
Balanced Propagation Delays
Overvoltage Tolerant (OVT) Input and Output Pins
Ultra−Small Packages
These are Pb−Free Devices
IN A2
OUT Y2
1
OUT Y1
IN A1
GND
OUT Y2
IN A2
1
2
3
5
4
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
6
V
CC
IN A1
OUT Y1
1
PIN ASSIGNMENT
1
2
3IN A2
IN A1
GND
4
5V
CC
OUT Y2
FUNCTION TABLE
L
H
AY
H
L
6 OUT Y1
MARKING
DIAGRAMS
Z or 3 = Device Marking
M = Date Code
www.onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
1
UDFN6
MU SUFFIX
CASE 517AA
1
ULLGA6
1.2 x 1.0
CASE 613AE
ZM
Z
M
UDFN6
1.45 x 1.0
CASE 517AQ
UDFN6
1.0 x 1.0
CASE 517BX
1
X M
1
X M
NLU2GU04
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2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage −0.5 to +7.0 V
V
IN
DC Input Voltage −0.5 to +7.0 V
V
OUT
DC Output Voltage −0.5 to +7.0 V
I
IK
DC Input Diode Current V
IN
< GND −20 mA
I
OK
DC Output Diode Current V
OUT
< GND ±20 mA
I
O
DC Output Source/Sink Current ±12.5 mA
I
CC
DC Supply Current Per Supply Pin ±25 mA
I
GND
DC Ground Current per Ground Pin ±25 mA
T
STG
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias 150 °C
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 2) ±500 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
Positive DC Supply Voltage 1.65 5.5 V
V
IN
Digital Input Voltage 0 5.5 V
V
OUT
Output Voltage 0 5.5 V
T
A
Operating Free−Air Temperature −55 +125 °C
Dt/DV
Input Transition Rise or Fall Rate V
CC
= 3.3 V ± 0.3 V
V
CC
= 5.0 V ± 0.5 V
0
0
100
20
ns/V
NLU2GU04
www.onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions V
CC
(V)
T
A
= 25 5C T
A
= +855C
T
A
= −555C to
+1255C
Unit
Min Typ Max Min Max Min Max
V
IH
Low−Level
Input
Voltage
1.65
2.3 to 5.5
0.85 x
V
CC
0.80 x
V
CC
0.85 x
V
CC
0.80 x
V
CC
V
V
IL
Low−Level
Input
Voltage
1.65
2.3 to 5.5
0.15 x
V
CC
0.20 x
V
CC
0.15 x
V
CC
0.20 x
V
CC
0.15 x
V
CC
0.20 x
V
CC
V
V
OH
High−Level
Output
Voltage
V
IN
= V
IH
or V
IL
I
OH
= −50 mA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
V
IN
= V
IH
or V
IL
I
OH
= −4 mA
I
OH
= −8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
OL
Low−Level
Output
Voltage
V
IN
= V
IH
or V
IL
I
OL
= 50 mA
2.0
3.0
4.5
0
0
0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
I
IN
Input
Leakage
Current
0 v V
IN
v 5.5 V 0 to 5.5 ±0.1 ±1.0 ±1.0
mA
I
CC
Quiescent
Supply
Current
0 v V
IN
v V
CC
5.5 1.0 20 40
mA
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3.0 ns)
Symbol
Parameter
V
CC
(V)
Test
Condition
T
A
= 25 5C T
A
= +855C
T
A
= −555C
to +1255C
Unit
Min Typ Max Min Max Min Max
t
PLH
,
t
PHL
Propagation Delay, Input A to
Output Y
3.0 to
3.6
C
L
= 15 pF 3.5 8.9 10.5 12
ns
C
L
= 50 pF 4.8 11.4 13 15.5
4.5 to
5.5
C
L
= 15 pF 2.5 5.5 6.5 8.0
C
L
= 50 pF 3.8 7.0 8.0 9.5
C
IN
Input Capacitance 4 10 10 10 pF
C
PD
Power Dissipation
Capacitance (Note 3)
5.0 22 pF
3. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation I
CC(OPR)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load
dynamic power consumption: P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC.

NLU2GU04MUTCG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Inverters HIGH SPEED CMOS DUAL UNBUFFERED INVERTER
Lifecycle:
New from this manufacturer.
Delivery:
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