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IRLML5103PbF
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -30 V V
GS
= 0V, I
D
= -250µA
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient -0.029 V/°C Reference to 25°C, I
D
= -1mA
0.60 V
GS
= -10V, I
D
= -0.60A
1.0 V
GS
= -4.5V, I
D
= -0.30A
V
GS(th)
Gate Threshold Voltage -1.0 V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 0.44 S V
DS
= -10V, I
D
= -0.30A
-1.0 V
DS
= -24V, V
GS
= 0V
-25 V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage -100 V
GS
= -20V
Gate-to-Source Reverse Leakage 100 V
GS
= 20V
Q
g
Total Gate Charge 3.4 5.1 I
D
= -0.60A
Q
gs
Gate-to-Source Charge 0.52 0.78 nC V
DS
= -24V
Q
gd
Gate-to-Drain ("Miller") Charge 1.1 1.7 V
GS
= -10V, See Fig. 6 and 9
t
d(on)
Turn-On Delay Time 10 V
DD
= -15V
t
r
Rise Time 8.2 I
D
= -0.60A
t
d(off)
Turn-Off Delay Time 23 R
G
= 6.2Ω
t
f
Fall Time 16 R
D
= 25Ω, See Fig. 10
C
iss
Input Capacitance 75 V
GS
= 0V
C
oss
Output Capacitance 37 pF V
DS
= -25V
C
rss
Reverse Transfer Capacitance 18 = 1.0MHz, See Fig. 5
Ω
µA
nA
ns
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(ON)
Static Drain-to-Source On-Resistance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage -1.2 V T
J
= 25°C, I
S
= -0.60A, V
GS
= 0V
t
rr
Reverse Recovery Time 26 39 ns T
J
= 25°C, I
F
= -0.60A
Q
rr
Reverse RecoveryCharge 20 30 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
A
S
D
G
-0.54
-4.8
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ -0.60A, di/dt ≤ 110A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.