Product Standards
Transistors with Built-in Resistor
DRC3152Z0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1.
Page
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
+85 °COperating ambient temperature Topr -40 to
Parameter Symbol Conditions
1.
2.
3.
Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard)
Parameter Symbol Rating Unit
Marking Symbol:
N0
Code
Base
Emitter
SOT-723
Panasonic
Packaging
SSSMini3-F2-B
JEITA
DRC3152Z0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA3152Z
DRC9152Z in SSSMini3 type package
Features
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
SC-105AA
Collector
1of3
Unit: mm
Min Typ
Internal Connection
Resistance
value
5.1
k
R1
0.51
k
R2
Collector-base voltage (Emitter open) VCBO
50
V
Collector-emitter voltage (Base open) VCEO
50
V
Collector current IC
100
mA
Total power dissipation PT
100
mW
Junction temperature Tj 150 °C
+150 °C
Collector-base voltage (Emitter open)
VCBO IC = 10 μA, IE = 0
Storage temperature Tstg -55 to
50
IC = 2 mA, IB = 0 50
Max Unit
V
V
Collector-base cutoff current (Emitter open)
ICBO VCB = 50 V, IE = 0 0.1 μA
Collector-emitter voltage (Base open)
Collector-emitter cutoff current (Base open)
ICEO VCE = 50 V, IB = 0 0.5 μA
2.0 mA
-
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.5 mA 0.25 V
20
V
Input voltage
Vi(on) VCE = 0.2 V, IC = 5 mA
Vi(off) VCE = 5 V, IC = 100 μA 0.4
Resistance ratio
R1/R2
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA
Emitter-base cutoff current (Collector open)
IEBO VEB = 6 V, IC = 0
R1
Input resistance
-30%
VCEO
V
1.0
0.10 0.12 -
0.51 +30%
k
0.08
1.2
1.2
0.52
0.8
0.2
0.8
0.3
(0.4)
0.13
12
3
(0.4)
C
B
R
1
R
2
E
