IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN82N120C3H1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 60A, V
CE
= 10V, Note 1 30 50 S
C
ie
s
4060 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 285 pF
C
res
110 pF
Q
g(on)
215 nC
Q
ge
I
C
= 75A, V
GE
= 15V, V
CE
= 0.5 • V
CES
26 nC
Q
gc
84 nC
t
d(on)
29 ns
t
ri
78 ns
E
on
4.95 mJ
t
d(off)
192 280 ns
t
fi
93 ns
E
of
f
2.78 5.00 mJ
t
d(on)
29 ns
t
ri
90 ns
E
on
7.45 mJ
t
d(off)
200 ns
t
fi
95 ns
E
off
3.70 mJ
R
thJC
0.25 °C/W
R
thCS
0.05 °C/W
Inductive load, T
J
= 25°C
I
C
= 80A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 2
Note 2
Inductive load, T
J
= 125°C
I
C
= 80A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 2
Note 2
SOT-227B miniBLOC (IXYN)
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher V
CE
(clamp), T
J
or R
G
.
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= 60A, V
GE
= 0V, Note 1 2.7 V
T
J
= 125°C 1.9 V
I
RM
41 A
t
rr
420 ns
R
thJC
0.42 °C/W
I
F
= 60A, V
GE
= 0V, T
J
= 125°C
-di
F
/dt = 700A/μs, V
R
= 600V