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QW-BSCxx
REV:
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
CDBJSC101700-G
RoHS Device
Maximum Rating (at Ta=25°C unless otherwise noted)
Reverse Voltage: 1700 V
Forward Current: 10 A
Dimensions in inches and (millimeter)
Parameter
Unit
Repetitive peak reverse voltage
DC bolcking voltage
Continuous forward current
Non-repetitive peak forward surge current
Power dissipation
Typical thermal resistance
Operating junction temperature range
Symbol
VRRM
VDC
IF
IFSM
PTOT
RθJC
TJ
1700
90
192
82
0.78
-55 ~ +175
V
V
A
A
W
°C/W
°C
Storage temperature range
TSTG
-55 ~ +175
°C
Value
1700
TC = 25°C
T = 135°CC
T = 155°CC
35
17
10
Repetitive peak forward surge current
IFRM
50
A
Conditions
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
T = 25°CC
T = 110°CC
Junction to case
Surge peak reverse voltage
VRSM
1700
V
TO-220-2 pin
0.052(1.32)
0.048(1.23)
0.173(4.40)
0.181(4.60)
0.512(13.00)
0.551(14.00)
0.620(15.75)
0.600(15.25)
0.155(3.93)
0.138(3.50)
0.116(2.95)
0.104(2.65)
0.152(3.85)
0.148(3.75)
0.028(0.70)
0.019(0.49)
0.067(1.70)
0.035(0.88)
0.024(0.61)
0.203(5.15)
0.195(4.95)
0.045(1.14)
0.646(16.40)
Max.
0.311(7.90)
0.303(7.70)
0.409(10.40)
0.394(10.00)
0.260(6.60)
0.244(6.20)
0.107(2.72)
0.094(2.40)
Circuit diagram
K(1) A(2)
K(3)
Features
- Rated to 1700V at 10 Amps
- Short recovery time.
- High speed switching possible.
- Temperature independent switching behaviour.
- High temperature operation.
- High frequency operation.
- Positive .temperature coefficient on VF
Silicon Carbide Power Schottky Diode
