T7H8167504DN Datasheet T7H8027504DN, T7H8047504DN, T7H8067504DN | P1-P3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Phase Control SCR

www.pwrx.com

750 Amperes Average

1600 Volts

Revision Date: 11/13/2007

T7H8

750A

T7H8 750A (Outline Drawing)

Ordering Information:

Select the complete 12 digit module part number from the table below.

Example: T7H8167504DN is a 1600V 750A Phase Control SCR.

Voltage Current Turn-off Time Gate Current Lead

Type

V

RRM

(Volts)

I

T(av)

(A)

t

q

(µsec)

I

GT

(mA)

Code

T7H8 02

through

16

200V

through

1600V

75

750A

0

150 µsec

typical

4

150 mA

DN

8”

Description:

Powerex Silicon Controlled

Rectifiers (SCR) are designed for

phase control applications. These

are all-diffused, Press-Pak,

hermetic Pow-R-Disc devices

employing the field proven

amplifying gate.

Features:

 Low On-State Voltage

 High di/dt Capability

 High dv/dt Capability

 Hermetic Packaging

 Excellent Surge and I

2

t Ratings

Applications:

 Power Supplies

 Motor Control

T7H8 750A Phase Control SCR

750 Amperes Average, 1600 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Phase Control SCR

www.pwrx.com

750 Amperes Average

1600 Volts

Revision Date: 11/13/2007

T7H8

750A

Absolute Maximum Ratings

Characteristics Symbol Units

Non-Repetitive Transient Peak Reverse Blocking Voltage V

RSM

V

RRM

+ 100V Volts

RMS On-State Current, T

C

= 62°C

I

T(RMS)

1180 Amperes

A

verage Current 180° Sine Wave, T

C

= 62°C I

T(AV)

750

Amperes

RMS On-State Current, T

C

= 55°C I

T(RMS)

1260 Amperes

A

verage Current 180° Sine Wave, T

C

= 55°C I

T(AV)

800 Amperes

Peak One Cycle Surge On-State Current (Non-Repetitive) 60 Hz I

TSM

10500 Amperes

Peak One Cycle Surge On-State Current (Non-Repetitive) 50 Hz I

TSM

9600 Amperes

Critical Rate-of-rise of On-State Current (Non-Repetitive) di/dt 600 A/µsec

Critical Rate-of-rise of On-State Current (Repetitive) di/dt 150 A/µsec

I

2

t (for Fusing) for One Cycle, 60 Hz I

2

t 460,000 A

2

sec

Peak Gate Power Dissipation P

GM

16 Watts

A

verage Gate Power Dissipation P

G(av)

3 Watts

Operating Temperature T

J

-40 to +125 °C

Storage Temperature T

stg

-40 to +150 °C

A

pproximate Weight 4 oz.

113 g

Mounting Force 2000 to 2400 lb.

900 to 1090 kg.

Information presented is based upon manufacturers testing and projected capabilities.

This information is subject to change without notice.

The manufacturer makes no claim as to the suitability of use, reliability, capability,

or future availability of this product.

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Phase Control SCR

www.pwrx.com

750 Amperes Average

1600 Volts

Revision Date: 11/13/2007

T7H8

750A

Thermal Characteristics

Maximum Thermal Resistance, Double Sided Cooling

Max.

Units

Junction-to-Case

Case-to-Sink

R

Θ(J-C)

R

Θ

(

C-S

)

0.04

0.02

°C/W

Electrical Characteristics, T

J

=25°C unless otherwise specified

Characteristics Symbol Test Conditions Min.

Typ. Max.

Units

Repetitive Peak Reverse Leakage Current I

RRM

T

J

=125°C, V

R

= V

RRM

30 mA

Repetitive Peak Forward Leakage Current I

DRM

T

J

=125°C, V

D

= V

DRM

30 mA

Peak On-State Voltage V

TM

I

FM

=625A peak,

Duty Cycle < 0.1 %

1.40 V

Threshold Voltage, Low-level

Slope Resistance, Low-level

V

(TO)1

r

T1

T

J

= 125°C, I = 15%I

T(AV)

to

π

I

T(AV)

0.97192

0.4818

V

mΩ

Threshold Voltage, High-level

Slope Resistance, High-level

V

(TO)2

r

T2

T

J

= 125°C, I =

π

I

T(AV)

to I

TSM

1.4824

0.2845

V

mΩ

V

TM

Coefficients, Low-level

T

J

= 125°C, I = 15%I

T(AV)

to πI

T(AV)

V

TM

= A+ B Ln(I) +C(I) + D Sqrt(I)

A =

B =

C =

D =

1.221

-0.1259

8.857 E-04

0.03348

Typical Turn-On Time t

on

I

T

= 100A, V

D

= 100 V

7

µs

Typical Turn-Off Time

t

q

T

j

= 125°C, I

T

= 250A,

di

R

/dt = 25A/µs Reapplied

dv/dt = 20 V/µs Linear to 80% V

DRM

150

µ

s

Minimum Critical dv/dt – Exponential to V

DRM

dv/dt

T

J

= 125°C

300

V/µs

Gate Trigger Current I

GT

T

J

= 25°C, V

D

= 12 V

150 mA

Gate Trigger Voltage V

GT

T

J

= 25°C, V

D

= 12 V

3.0 V

Non-Triggering Gate Voltage V

GDM

T

J

= 125°C, V

D

= V

DRM

0.15 V

Peak Forward Gate Current I

GTM

4 A

Peak Reverse Gate Voltage V

GRM

5 V

T7H8167504DN

T7H8167504DN

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