TLP4172G(F)

TLP4172G
2007-10-01
1
TOSHIBA Photocoupler Photorelay
TLP4172G
Telecommunication
Measurement Equipment
Security Equipment
FA
The Toshiba TLP4172G consists of an aluminum gallium arsenide
infrared emitting diode optically coupled to a photo-MOSFET in a SOP
package. This 1-form-B (NC) photorelay features a withstanding voltage
of 350 V.
4-pin SOP (2.54SOP4): Height = 2.1 mm, pitch = 2.54 mm
Normally closed (1-form-B) device
Peak off-state voltage: 350 V (min)
Trigger LED current: 3 mA (max)
On-state current: 90 mA (max)
On-state resistance: 50 (max)
Isolation voltage: 1500 Vrms (min)
UL Recognized: UL1577, File No. E67349
Pin Configuration
(top view)
Unit: mm
JEDEC
JEITA
TOSHIBA 11-5H1
Weight: 0.1 g (typ.)
1
2
4
3
1: Anode
2: Cathode
3: Drain
4: Drain
TLP4172G
2007-10-01
2
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Forward current I
F
50 mA
Forward current derating (Ta
>
=
25°C) ΔI
F
/°C 0.5 mA/°C
Peak forward current (100 μs pulse, 100 pps) I
FP
1 A
Reverse voltage V
R
5 V
LED
Junction temperature T
j
125 °C
Off-state output terminal voltage V
OFF
350 V
One channel operation
On-state current
Two channel operations
(1a1b simultaneous operation)
I
ON
90 mA
One channel operation
On-state current derating
(Ta
>
=
25°C)
Two channel operations
(1a1b simultaneous operation)
ΔI
ON
/°C 0.9 mA/°C
Detector
Junction temperature T
j
125 °C
Storage temperature range T
stg
55 to 125 °C
Operating temperature range T
opr
40 to 85 °C
Lead soldering temperature (10 s) T
sol
260 °C
Isolation voltage (AC, 1 min, R.H.
<
=
60%) (Note 1) BV
S
1500 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together.
Recommended Operating Conditions
Characteristics Symbol Min Typ. Max Unit
Supply voltage V
DD
280 V
Forward current I
F
5 25 mA
On-state current I
ON
90 mA
Operating temperature T
opr
20 65 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Forward voltage V
F
I
F
= 10 mA 1.0 1.15 1.3 V
Reverse current I
R
V
R
= 5 V 10 μA
LED
Capacitance C
T
V = 0, f = 1 MHz 30 pF
Off-state current I
OFF
V
OFF
= 350 V, I
F
= 5 mA 1 μA
Detector
Capacitance C
OFF
V = 0, f = 1 MHz, I
F
= 5 mA 30 pF
TLP4172G
2007-10-01
3
Coupled Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Trigger LED current I
FC
I
OFF
= 10 μA 1 3 mA
Return LED current I
FT
I
ON
= 90 mA 0.1 mA
On-state resistance R
ON
I
ON
= 90 mA 27 50 Ω
Isolation Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Capacitance input to output C
S
V
S
= 0, f = 1 MHz 0.8 pF
Isolation resistance R
S
V
S
= 500 V, R.H.
<
=
60% 5 × 10
10
10
14
Ω
AC, 1 min 1500
AC, 1 s, in oil 3000
Vrms
Isolation voltage BV
S
DC, 1 min, in oil 3000 Vdc
Switching Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Turn-on time t
ON
0.25 0.5 ms
Turn-off time t
OFF
R
L
= 200 Ω
V
DD
= 20 V, I
F
= 5 mA (Note 2)
0.5 1 ms
Note 2: Switching time test circuit
4
t
OFF
t
ON
10%
90%
V
OUT
I
F
1
V
DD
V
OUT
R
L
3 2
I
F

TLP4172G(F)

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