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TT8J1TR

P1-P3P4-P6
1/5
www.rohm.com
○
c
2009 ROHM Co., Ltd. All rights reserved.
2009.01 - Rev.
A
1.5V Drive Pch+Pch MOSFET
TT8J1
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance.
2) High Power Package.
3) Low voltage drive. (1.5V)
zApplications
Switching
zPackaging specifications zInner circuit
Package
Code
Taping
Basic ordering unit (pieces)
TT8J1
TR
3000
Type
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>
∗1
∗2
∗1
Parameter
VV
DSS
Symbol
VV
GSS
AI
D
AI
DP
AI
S
AI
SP
W / TOTAL
P
D
°CTch
°CTstg
Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of Storage temperature
Continuous
Pulsed
Continuous
Pulsed
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Source current
(Body diode)
−12
±10
±2.5
±10
−0.8
−10
1.25
W / ELEMENT
1.0
150
−55 to +150
Limits
zThermal resistance
Parameter
°C / W / TOTAL
Rth(ch-a)
Symbol Limits Unit
C
hannel to ambient
∗ Mounted on a ceramic board
100
°C / W / ELEMENT
125
∗
Each lead has same dimensions
(8) (7) (5)(6)
(1) (2) (4)(3)
Abbreviated symbol : J01
TSST8
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2
∗1
(8) (7)
(1) (2)
∗2
∗1
(6) (5)
(3) (4)
TT8J1 Data Sheet
2/5
www.rohm.com
○
c
2009 ROHM Co., Ltd. All rights reserved.
2009.01 - Rev.
A
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter Symbol
I
GSS
Y
fs
Min. Typ. Max.
Unit
Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
∗
∗
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
−−±10 µAV
GS
=±10V, V
DS
=0V
V
DD
−6V
R
L
2.4Ω / R
G
=10Ω
−12 −−VI
D
= −1mA, V
GS
=0V
−−−1 µAV
DS
= −12V, V
GS
=0V
−0.3 −−1.0 V V
DS
= −6V, I
D
= −1mA
− 44 61 I
D
= −2.5A, V
GS
= −4.5V
− 60 84 mΩ
mΩ
mΩ
I
D
= −1.2A, V
GS
= −2.5V
− 110 220 I
D
= −0.5A, V
GS
= −1.5V
mΩ− 81 121 I
D
= −1.2A, V
GS
= −1.8V
3.5 −−SV
DS
= −6V, I
D
= −2.5A
− 1350 − pF V
DS
= −6V
− 130
125
− pF V
GS
=0V
−
9
− pF f=1MHz
−
35
− ns
−
130
− ns
−
85
− ns
−
13
− ns
−
2.5
− nC
−
2.0
− nC
V
GS
=
−4.5V
−−nC
I
D
=
−2.5A
V
DD
−6V
I
D
= −1.2A
V
GS
= −4.5V
R
L
5Ω
R
G
=10Ω
zBody diode characteristics (Source-drain) (Ta=25°C)
V
SD
∗
∗ Pulsed
−−−1.2 V I
S
= −2.5A, V
GS
=0VForward voltage
Parameter Symbol
Min. Typ. Max.
Unit
Conditions
TT8J1 Data Sheet
3/5
www.rohm.com
○
c
2009 ROHM Co., Ltd. All rights reserved.
2009.01 - Rev.
A
zElectrical characteristic curves
10
100
1000
0.1 1 10
DRAIN CURRENT : -I
D
[A]
STATIC DRAIN-SOURCE ON-STAT
E
RESISTANCE : R
DS
(on) [mΩ]
V
GS
= -1.5V
Pulsed
Ta= 125
°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1
DRAIN-SOURCE VOLTAGE -V
DS
[V]
DRAIN CURRENT -I
D
[A]
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -4.0V
V
GS
= -2.5V
V
GS
= -2.0V
V
GS
= -1.6V
V
GS
= -1.2V
Ta=25℃
Pulsed
0.01
0.1
1
10
00.511.5
GATE-SOURCE VOLTAGE : -V
GS
[V]
DRAIN CURRENT : -I
D
[A]
V
DS
= -6V
Pulsed
Ta= 125
°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
10
100
1000
0.1 1 10
DRAIN CURRENT : -I
D
[A]
STATIC DRAIN-SOURCE ON-STAT
E
RESISTANCE : R
DS
(on) [mΩ]
Ta=25
℃
Pulsed
V
GS
= -1.5V
V
GS
= -1.8V
V
GS
= -2.5V
V
GS
= -4.5V
.
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2
SOURCE-DRAIN VOLTAGE : -V
SD
[V]
REVERSE DRAIN CURRENT : -Is [A]
V
GS
=0V
Pulsed
Ta= 125
°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0
2
4
6
8
10
0246810
DRAIN-SOURCE VOLTAGE -V
DS
[V]
DRAIN CURRENT -I
D
[A]
V
GS
= -1.2V
V
GS
= -1.5V
Ta=25
℃
Pulsed
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -2.5V
V
GS
= -1.8V
10
100
1000
0.1 1 10
DRAIN CURRENT : -I
D
[A]
STATIC DRAIN-SOURCE ON-STAT
E
RESISTANCE : R
DS
(on) [mΩ]
V
GS
= -2.5V
Pulsed
Ta= 125
°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
10
100
1000
0.1 1 10
DRAIN CURRENT : -I
D
[A]
STATIC DRAIN-SOURCE ON-STAT
E
RESISTANCE : R
DS
(on) [mΩ]
V
GS
= -4.5V
Pulsed
Ta= 125
°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
10
100
1000
0.1 1 10
DRAIN CURRENT : -I
D
[A]
STATIC DRAIN-SOURCE ON-STAT
E
RESISTANCE : R
DS
(on) [mΩ]
V
GS
= -1.8V
Pulsed
Ta= 125
°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
Fig.1 Typical Output Characteristics(
Ⅰ
) Fig.2 Typical Output Characteristics(
Ⅱ
) Fig.3 Typical Transfer Characteristics
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅰ
)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅱ
)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅲ
)
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅳ
)
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅳ
)
P1-P3P4-P6

TT8J1TR

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MOSFET 2P-CH 12V 2.5A TSST8
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