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J310

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 1
1 Publication Order Number:
J309/D
J309, J310
Preferred Device
JFET VHF/UHF Amplifiers
N−Channel — Depletion
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage V
DS
25 Vdc
Gate−Source Voltage V
GS
25 Vdc
Forward Gate Current I
GF
10 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above = 25°C
P
D
350
2.8
mW
mW/°C
Junction Temperature Range T
J
−65 to +125 °C
Storage Temperature Range T
stg
−65 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MARKING DIAGRAM
http://onsemi.com
TO−92
CASE 29−11
STYLE 5
1
2
3
J3xx
AYWW G
G
1 DRAIN
2 SOURCE
3
GATE
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
J3xx = Device Code
xx = 09 or 10
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
Preferred devices are recommended choices for future use
and best overall value.
J309, J310
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(I
G
= −1.0 mAdc, V
DS
= 0)
V
(BR)GSS
−25 − − Vdc
Gate Reverse Current
(V
GS
= −15 Vdc, V
DS
= 0, T
A
= 25°C)
(V
GS
= −15 Vdc, V
DS
= 0, T
A
= +125°C)
I
GSS
−
−
−
−
−1.0
−1.0
nAdc
mAdc
Gate Source Cutoff Voltage
(V
DS
= 10 Vdc, I
D
= 1.0 nAdc) J309
J310
V
GS(off)
−1.0
−2.0
−
−
−4.0
−6.5
Vdc
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current
(1)
(V
DS
= 10 Vdc, V
GS
= 0) J309
J310
I
DSS
12
24
−
−
30
60
mAdc
Gate−Source Forward Voltage
(V
DS
= 0, I
G
= 1.0 mAdc)
V
GS(f)
− − 1.0 Vdc
SMALL−SIGNAL CHARACTERISTICS
Common−Source Input Conductance
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 100 MHz) J309
J310
Re(y
is
)
−
−
0.7
0.5
−
−
mmhos
Common−Source Output Conductance
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 100 MHz)
Re(y
os
) − 0.25 − mmhos
Common−Gate Power Gain
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 100 MHz)
G
pg
− 16 − dB
Common−Source Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 100 MHz)
Re(y
fs
) − 12 − mmhos
Common−Gate Input Conductance
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 100 MHz)
Re(y
ig
) − 12 − mmhos
Common−Source Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz) J309
J310
g
fs
10000
8000
−
−
20000
18000
mmhos
Common−Source Output Conductance
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz)
g
os
− − 250
mmhos
Common−Gate Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz) J309
J310
g
fg
−
−
13000
12000
−
−
mmhos
Common−Gate Output Conductance
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz) J309
J310
g
og
−
−
100
150
−
−
mmhos
Gate−Drain Capacitance
(V
DS
= 0, V
GS
= −10 Vdc, f = 1.0 MHz)
C
gd
− 1.8 2.5 pF
Gate−Source Capacitance
(V
DS
= 0, V
GS
= −10 Vdc, f = 1.0 MHz)
C
gs
− 4.3 5.0 pF
FUNCTIONAL CHARACTERISTICS
Equivalent Short−Circuit Input Noise Voltage
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 100 Hz)
e
n
− 10 −
nVń Hz
Ǹ
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 3.0%.
J309, J310
http://onsemi.com
3
ORDERING INFORMATION
Device Package Shipping
†
J309 TO−92
1000 Units / Bulk
J309G TO−92
(Pb−Free)
J310 TO−92
1000 Units / Bulk
J310G TO−92
(Pb−Free)
J310RLRP TO−92
2000 Units / Tape & Ammo Box
J310RLRPG TO−92
(Pb−Free)
J310ZL1 TO−92
2000 Units / Tape & Ammo Box
J310ZL1G TO−92
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
70
60
50
40
30
20
, SATURATION DRAIN CURRENT (mA)
−5.0 −4.0 −3.0 −2.0
−1.0 0
I
D
− V
GS
, GATE−SOURCE VOLTAGE (VOLTS)
I
DSS
10
0
70
60
50
40
30
20
10
, DRAIN CURRENT (mA)I
D
I
DSS
− V
GS
, GATE−SOURCE CUTOFF VOLTAGE (VOLTS)
Figure 1. Drain Current and Transfer
Characteristics versus Gate−Source Voltage
V
DS
= 10 V
I
DSS
+25 °C
T
A
= −55°C
+25 °C
+25 °C
−55 °C
+150°C
+150°C
V
GS
, GATE−SOURCE VOLTAGE (VOLTS)
5.0 4.0 3.0 2.0
1.0 0
35
30
25
20
15
10
5.0
0
, FORWARD TRANSCONDUCTANCE (mmhos)Y
fs
Figure 2. Forward Transconductance
versus Gate−Source Voltage
V
DS
= 10 V
f = 1.0 MHz
T
A
= −55°C
+25 °C
+150°C
+25 °C
−55 °C
+150°C
P1-P3P4-P5

J310

Mfr. #:
Buy J310
Manufacturer:
InterFET
Description:
JFET JFET N-Channel -25V 10mA 360mW
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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