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MJE5731

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 8
1 Publication Order Number:
MJE5730/D
MJE5730, MJE5731,
MJE5731A
High Voltage PNP Silicon
Plastic Power Transistors
These devices are designed for line operated audio output amplifier,
switch−mode power supply drivers and other switching applications.
Features
• Popular TO−220 Plastic Package
• PNP Complements to the TIP47 thru TIP50 Series
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MJE5730
MJE5731
MJE5731A
V
CEO
300
350
375
Vdc
Collector−Base Voltage
MJE5730
MJE5731
MJE5731A
V
CB
300
350
375
Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current − Continuous I
C
1.0 Adc
Collector Current − Peak I
CM
3.0 Adc
Base Current I
B
1.0 Adc
Total Device Dissipation
@ T
C
= 25_C
Derate above 25°C
P
D
40
0.32
W
W/_C
Total Device Dissipation
@ T
C
= 25_C
Derate above 25°C
P
D
2.0
0.016
W
W/_C
Unclamped Inducting Load Energy
(See Figure 10)
E 20 mJ
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
3.125
_C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
62.5
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
1.0 AMPERE
POWER TRANSISTORS
PCP SILICON
300−350−400 VOLTS
50 WATTS
TO−220
CASE 221A−09
STYLE 1
1
www.onsemi.com
MARKING DIAGRAM
2
3
MJE573x = Device Code
x = 0, 1, or 1A
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MJE573xG
AY WW
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
4
1
BASE
3
EMITTER
COLLECTOR
2, 4
MJE5730, MJE5731, MJE5731A
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 30 mAdc, I
B
= 0)
MJE5730
MJE5731
MJE5731A
V
CEO(sus)
300
350
375
−
−
−
Vdc
Collector Cutoff Current
(V
CE
= 200 Vdc, I
B
= 0)
MJE5730
(V
CE
= 250 Vdc, I
B
= 0)
MJE5731
(V
CE
= 300 Vdc, I
B
= 0)
MJE5731A
I
CEO
−
−
−
1.0
1.0
1.0
mAdc
Collector Cutoff Current
(V
CE
= 300 Vdc, V
BE
= 0)
MJE5730
(V
CE
= 350 Vdc, V
BE
= 0)
MJE5731
(V
CE
= 400 Vdc, V
BE
= 0)
MJE5731A
I
CES
−
−
−
1.0
1.0
1.0
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
− 1.0
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= 0.3 Adc, V
CE
= 10 Vdc)
(I
C
= 1.0 Adc, V
CE
= 10 Vdc)
h
FE
30
10
150
−
−
Collector−Emitter Saturation Voltage
(I
C
= 1.0 Adc, I
B
= 0.2 Adc)
V
CE(sat)
− 1.0
Vdc
Base−Emitter On Voltage
(I
C
= 1.0 Adc, V
CE
= 10 Vdc)
V
BE(on)
− 1.5
Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
(I
C
= 0.2 Adc, V
CE
= 10 Vdc, f = 2.0 MHz)
f
T
10 −
MHz
Small−Signal Current Gain
(I
C
= 0.2 Adc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
fe
25 −
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
T
J
= 25°C
0.03
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (AMPS)
2.0
0.02 0.03 0.05 0.1 0.2 0.5 1.0 2.0
30
10
3.0
Figure 2. Collector−Emitter Saturation Voltage
0.02
I
C
, COLLECTOR CURRENT (AMPS)
0
0.05 0.3
1.2
h
FE
, DC CURRENT GAIN
5.0
V
CE
= 10 V
1.0 2.0
1.4
1
T
J
= 150°C
20
0.50.3
0.8
0.6
0.1
V
CE(sat))
@ I
C
/I
B
= 5.0
0.2
0.2
0.4
25°C
-55°C
100
50
200
150°C
-55°C
MJE5730, MJE5731, MJE5731A
www.onsemi.com
3
I
C
, COLLECTOR CURRENT (AMPS)
1.0
0.8
V, VOLTAGE (V)
1.4
1.2
0.4
0
0.6
0.2
Figure 3. Base−Emitter Voltage
0.05 0.2 2.00.1 0.50.3 1.00.02 0.03
V
BE(sat)
@ I
C
/I
B
= 5.0
T
J
= - 55°C
25°C
150°C
DERATING FACTOR
1.0
0
T
C
, CASE TEMPERATURE (°C)
0
50 175
0.8
0.6
0.4
0.2
75 100 125
Figure 4. Normalized Power Derating
SECOND BREAKDOWN
DERATING
THERMAL
DERATING
25 150
10
5.0
Figure 5. Forward Bias Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
2.0
0.5
0.01
30 100
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
I
C
, COLLECTOR CURRENT (AMP)
dc
500 ms
0.05
10 20
1.0ms
200 300 50
0
1.0
0.2
50
0.1
0.02
T
C
= 25°C
100 ms
MJE5730
MJE5731
MJE5732
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
J(pk)
≤ 150_C. T
J(pk)
may be calculated from the data in
Figure 6. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
t, TIME (ms)
1.0
0.01
1 k
0.3
0.2
0.07
r(t), TRANSIENT THERMAL
R
q
JC(t)
= r(t) R
q
JC
R
q
JC
= 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.01
RESISTANCE (NORMALIZED)
0.7
Figure 6. Thermal Response
0.5
0.1
0.05
0.03
0.02
0.02 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
0.2
SINGLE PULSE
D = 0.5
0.05
0.1
0.02
0.01
P1-P3P4-P6

MJE5731

Mfr. #:
Buy MJE5731
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 1A 350V 40W PNP
Lifecycle:
New from this manufacturer.
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