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SZESD7421N2T5G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2016
November, 2016 − Rev. 2
1 Publication Order Number:
ESD7421/D
ESD7421, SZESD7421
ESD Protection Diodes
Micro−Packaged Diodes for ESD Protection
The ESD7421 is designed to protect voltage sensitive components
from ESD. Excellent clamping capability, low leakage, and fast
response time provide best in class protection on designs that are
exposed to ESD. Because of its small size, it is suited for use in cellular
phones, automotive sensors, infotainment, MP3 players, digital
cameras and many other applications where board space comes at a
premium.
Specification Features
• Low Capacitance 0.3 pF
• Low Clamping Voltage
• Low Leakage 100 nA
• Response Time is < 1 ns
• IEC61000−4−2 Level 4 ESD Protection
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 61000−4−2 (ESD) Contact
Air
±12
±15
kV
Total Power Dissipation on FR−5 Board
(Note 1) @ T
A
= 25°C
Thermal Resistance, Junction−to−Ambient
°P
D
°
R
q
JA
300
400
mW
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
Lead Solder Temperature − Maximum
(10 Second Duration)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
See Application Note AND8308/D for further description of survivability specs.
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
www.onsemi.com
ESD7421N2T5G XDFN2
(Pb−Free)
8000 /
Tape & Reel
XDFN2
(SOD−882)
CASE 711AM
MARKING
DIAGRAM
Pin 2
5 = Specific Device Code
M = Date Code
G = Pb−Free Package
5 M
G
SZESD7421N2T5G XDFN2
(Pb−Free)
8000 /
Tape & Reel
Pin 1
ESD7421, SZESD7421
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR1
Breakdown Voltage @ I
T
V
BR2
Breakdown Voltage @ I
T
I
T
Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Bi−Directional TVS
I
PP
I
PP
V
I
I
R
I
T
I
T
I
R
V
RWM
V
C
V
BR2
V
RWM
V
C
V
BR1
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Conditions Min Typ Max Unit
Reverse Working
Voltage
V
RWM
Pin 1 to GND
Pin 2 to GND
5
5
16
10
V
Breakdown Voltage V
BR1
I
T
= 1 mA, Pin 1 to GND 16.5 V
Breakdown Voltage V
BR2
I
T
= 1 mA, Pin 2 to GND 10.5 14 V
Reverse Leakage
Current
I
R
V
RWM
= 5 V, I/O Pin to GND
V
RWM
= 16 V, Pin 1 to GND
100 500
1.0
nA
mA
Clamping Voltage
(Note 2)
V
C
IEC61000−4−2, ±8 kV Contact See Figures 2 and 3
Clamping Voltage TLP
(Note 3)
V
C
I
PP
= 8 A
I
PP
= 16 A
I
PP
= −8 A
I
PP
= −16 A
35
38.1
−21
−29.5
V
Junction Capacitance C
J
VR = 0 V, f = 1 MHz between I/O Pins and GND 0.3 0.6 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. For test procedure see Figure 5 and application note AND8307/D.
3. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z
0
= 50 W, t
p
= 100 ns, t
r
= 4 ns, averaging window; t
1
= 30 ns to t
2
= 60 ns.
ESD7421, SZESD7421
www.onsemi.com
3
1.0
Figure 1. Typical CV Characteristic Curve
Pin1 to GND (GND connected to Pin2)
VBias (V)
CAPACITANCE (pF)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Figure 2. IEC61000−4−2 +8 kV Contact ESD
Clamping Voltage
Pin1 to GND (GND connected to Pin2)
−25
120
TIME (ns)
VOLTAGE (V)
0
100
80
60
40
20
0
−20
25 50 75 150100 125
Figure 3. IEC61000−4−2 −8 kV Contact ESD
Clamping Voltage
Pin1 to GND (GND connected to Pin2)
−25
20
TIME (ns)
VOLTAGE (V)
0 25 50 150100 125
0
−20
−40
−60
−80
−100
−120
75
−5 −4 −2 0 1 2 3 5
4−1−3
P1-P3P4-P6

SZESD7421N2T5G

Mfr. #:
Buy SZESD7421N2T5G
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors Q101 PPAP ESD7421
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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